JANSG2N2221AUB-Transistor NPN Bipolar Junction Transistor, TO-18 Metal Can Package

  • This transistor amplifies electrical signals, enabling precise control in various electronic circuits.
  • Its current gain characteristic ensures efficient signal amplification with reduced distortion.
  • The compact package design allows for board-space savings and easier integration into tight layouts.
  • Ideal for switching applications in consumer electronics, improving performance while minimizing power loss.
  • Manufactured to meet industry standards, providing consistent reliability under normal operating conditions.
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JANSG2N2221AUB-Transistor Overview

The JANSG2N2221AUB-Transistor is a robust NPN bipolar junction transistor (BJT) optimized for general-purpose amplification and switching applications. Designed to deliver reliable performance with a maximum collector current of 800mA and a collector-emitter voltage rating of 40V, this component ensures efficient signal handling in a compact SOT-223 package. Its high gain bandwidth product and low saturation voltage make it suitable for diverse industrial electronics scenarios, including signal amplification and low-power switching. Engineers and sourcing specialists will appreciate its consistent electrical characteristics and ease of integration, provided by IC Manufacturer.

JANSG2N2221AUB-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 800 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100?C300 (at IC=150 mA)
Transition Frequency (fT) 300 MHz
Package Type SOT-223 Surface Mount

JANSG2N2221AUB-Transistor Key Features

  • High Collector Current Capability: Supports up to 800mA, enabling effective switching and amplification in moderate power applications.
  • Wide Voltage Tolerance: Collector-emitter voltage rating of 40V allows use in circuits with varied voltage demands.
  • Fast Switching Speeds: Transition frequency of 300 MHz ensures responsiveness in high-frequency applications.
  • Compact SOT-223 Package: Facilitates efficient PCB space utilization and simplifies automated assembly processes.
  • Stable Current Gain: DC current gain ranging from 100 to 300 guarantees predictable amplification performance.

Typical Applications

  • Signal amplification in audio and low-frequency analog circuits where reliable gain and linearity are required.
  • Switching devices in power regulation circuits and small motor drivers, benefiting from high collector current handling.
  • Interface drivers for microcontrollers and logic circuits needing fast switching and moderate power dissipation.
  • General-purpose electronic circuit designs in industrial automation requiring durable, surface-mount transistors.

JANSG2N2221AUB-Transistor Advantages vs Typical Alternatives

This transistor offers advantageous performance compared to typical alternatives with similar ratings by balancing high current capacity and fast transition frequency in a compact surface-mount package. Its stable gain and reliable voltage tolerance enhance circuit accuracy and resilience, reducing thermal stress through efficient power dissipation and promoting longer operational lifetimes in industrial environments.

JANSG2N2221AUB-Transistor Brand Info

The JANSG2N2221AUB-Transistor is manufactured by JAN Semiconductor, a reputable supplier known for producing high-quality discrete semiconductors. This brand specializes in bipolar junction transistors designed for industrial and commercial applications, emphasizing reliability and consistency. The product line includes various transistor types tailored for switching, amplification, and signal processing, supported by rigorous quality control and standardized packaging suitable for automated assembly.

FAQ

What is the maximum collector current supported by this transistor?

The transistor supports a maximum collector current of 800mA, making it suitable for medium power switching and amplification applications requiring robust current handling capacity.

Can this transistor handle high-frequency signals effectively?

Yes, with a transition frequency (fT

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