JANSF2N5153U3/TR Overview
The JANSF2N5153U3/TR is a high-performance N-channel MOSFET designed for robust switching and amplification in industrial and automotive applications. Engineered for low on-resistance and fast switching speed, it delivers efficient power management and thermal reliability. This transistor supports enhanced circuit integration, making it ideal for power supplies, motor control, and load switching. With a streamlined package optimized for heat dissipation, it ensures reliable operation under demanding conditions. Sourcing specialists and engineers can trust its consistent quality and compliance with military-grade standards. For more details, visit IC Manufacturer.
JANSF2N5153U3/TR Key Features
- Low On-Resistance (RDS(on)): Minimizes conduction losses, improving overall power efficiency in switching applications.
- High Voltage Rating: Supports voltages up to 60V, enabling use in medium-power circuits requiring reliable high-voltage handling.
- Fast Switching Speed: Reduces switching losses and enhances performance in PWM and motor drive circuits.
- Thermally Efficient Package: Facilitates heat dissipation, maintaining device stability and extending operational life.
- High Continuous Drain Current: Allows control of significant load currents, suitable for demanding industrial environments.
- Robust Gate Threshold Voltage: Ensures consistent turn-on characteristics for precise control in digital and analog systems.
- Military-Grade Reliability: Complies with JAN (Joint Army-Navy) standards for ruggedness and durability in harsh conditions.
JANSF2N5153U3/TR Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 4.0 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 V |
| On-Resistance (RDS(on)) | 0.18 ?? (Max at VGS = 10 V) |
| Total Gate Charge (Qg) | 8 nC (Typical) |
| Power Dissipation (PD) | 1.25 W |
| Operating Temperature Range | -55??C to +150??C |
| Package Type | TO-252 (DPAK) |
JANSF2N5153U3/TR Advantages vs Typical Alternatives
This device offers a compelling combination of low on-resistance and high voltage capability, outperforming many generic MOSFETs in power efficiency and thermal management. Its military-grade certification guarantees superior reliability under stressful environmental conditions, making it more robust than commercial equivalents. The fast switching characteristics enable reduced energy loss in dynamic applications, while the compact TO-252 package allows easy integration into space-constrained designs.
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Typical Applications
- Automotive power control modules, where reliable switching and high current capability are essential for system stability and safety.
- DC-DC converters requiring efficient power handling and thermal performance for extended operation.
- Industrial motor drives that benefit from fast switching speeds and robust voltage tolerance for precise control.
- Load switching circuits in industrial and military equipment, leveraging durability and consistent electrical characteristics.
JANSF2N5153U3/TR Brand Info
The JANSF2N5153U3/TR is part of the Joint Army-Navy (JAN) series, specifically designed to meet stringent military and industrial standards. This product is manufactured by a trusted semiconductor supplier specializing in high-reliability components for harsh environments. The JAN prefix indicates rigorous quality testing and compliance with military specifications, ensuring dependable operation in mission-critical applications. This device combines industry-leading electrical performance with robust packaging for extended lifecycle and dependable sourcing.
FAQ
What is the maximum voltage rating of this MOSFET?
The maximum drain-source voltage (VDS) for this transistor is 60 volts, which enables it to handle medium-voltage applications safely and reliably.
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How does the low on-resistance benefit my design?
Lower on-resistance reduces conduction losses during operation, improving overall efficiency and minimizing heat generation, which is critical for power-sensitive and thermally constrained circuits.
Is this transistor suitable for high-temperature environments?
Yes, it supports an operating temperature range from -55??C up to +150??C, making it suitable for use in demanding industrial and automotive environments.
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What package type is used for this device, and why does it matter?
It is housed in a TO-252 (DPAK) package, which provides good thermal performance and ease of mounting on PCBs, essential for efficient heat dissipation and compact system design.
What makes this MOSFET reliable for military applications?
The JAN designation ensures it meets rigorous military standards for quality and reliability, including extensive testing for temperature extremes, vibration, and electrical stress, making it suitable for mission-critical systems.
