JANSF2N5153L-Transistor Overview
The JANSF2N5153L is a high-performance NPN bipolar junction transistor designed for industrial and commercial electronics applications. Featuring a robust breakdown voltage and low saturation voltage, it ensures reliable switching and amplification in demanding environments. This transistor is well-suited for use in power management, signal amplification, and switching circuits, delivering consistent performance with enhanced thermal stability. Its rugged construction supports extended lifecycle and operational reliability, making it an ideal choice for engineers and sourcing specialists seeking efficient and durable transistor solutions. For more detailed semiconductor components, visit IC Manufacturer.
JANSF2N5153L-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector Current (IC) | 10 A (maximum continuous) |
| Power Dissipation (Ptot) | 40 W |
| Gain Bandwidth Product (fT) | 15 MHz |
| DC Current Gain (hFE) | 20 to 70 (at IC=4A) |
| Saturation Voltage (VCE(sat)) | 1.5 V (typical at IC=4A) |
| Junction Temperature (TJ) | 150 ??C (maximum) |
| Package | TO-3 Metal Can |
JANSF2N5153L-Transistor Key Features
- High collector current capability: Supports continuous currents up to 10 A, enabling efficient power switching in medium power applications.
- Robust voltage rating: With an 80 V collector-emitter voltage, it provides reliable operation in circuits requiring moderate voltage tolerance.
- Low saturation voltage: Minimizes power loss during switching, improving overall circuit efficiency and thermal management.
- Wide gain range: Offers flexibility in circuit design with a DC current gain between 20 and 70, suitable for various amplification requirements.
- Durable TO-3 package: Ensures excellent heat dissipation and mechanical stability, enhancing device reliability under harsh conditions.
Typical Applications
- Power amplifiers in audio and industrial signal processing, where high current and moderate voltage handling are required for robust performance.
- Switching regulators and power supply circuits, benefiting from the transistor??s low saturation voltage and high current capacity.
- Motor control circuits in automation systems, leveraging the device??s ability to handle transient loads and deliver consistent switching.
- General-purpose industrial control applications requiring reliable, high-power transistor solutions with proven thermal stability.
JANSF2N5153L-Transistor Advantages vs Typical Alternatives
This transistor stands out with its combination of high collector current and robust voltage rating, offering engineers a reliable choice for medium-power applications. Its low saturation voltage contributes to higher efficiency and reduced thermal stress compared to many similar devices. The TO-3 package provides superior heat dissipation and mechanical durability, enhancing long-term reliability in industrial environments. These factors collectively deliver improved performance and lifespan over typical alternatives in power amplification and switching roles.
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JANSF2N5153L-Transistor Brand Info
The JANSF2N5153L is a military-grade transistor variant typically produced by established semiconductor manufacturers specializing in ruggedized components. It complies with stringent JEDEC and MIL-STD specifications, ensuring reliable operation under harsh environmental conditions. This device is often sourced from reputable suppliers who maintain rigorous quality control and traceability standards, making it a preferred solution for aerospace, defense, and industrial applications requiring high reliability and consistent performance.
FAQ
What type of transistor is the JANSF2N5153L?
The device is an NPN bipolar junction transistor (BJT) designed for medium-power switching and amplification applications. It operates reliably at high currents up to 10 A and collector-emitter voltages up to 80 V.
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