The JANSF2N5153 is a high-performance NPN bipolar junction transistor designed for industrial and military applications requiring reliable switching and amplification. Featuring a collector-emitter voltage rating of 120 V and a continuous collector current of 1.5 A, this transistor provides robust power handling capabilities. Its complementary low-noise design supports high gain and fast switching speeds, which are essential for signal processing and control circuits. Manufactured according to stringent military standards, the device ensures consistent performance under harsh environmental conditions. For detailed sourcing and technical support, consult the IC Manufacturer.
JANSF2N5153-Transistor Technical Specifications
Parameter
Value
Unit
Collector-Emitter Voltage (VCEO)
120
V
Collector-Base Voltage (VCBO)
140
V
Emitter-Base Voltage (VEBO)
5
V
Collector Current, Continuous (IC)
1.5
A
Gain Bandwidth Product (fT)
100
MHz
DC Current Gain (hFE)
40 to 160
??
Power Dissipation (PD)
1.0
W
Junction Temperature (TJ)
+200
??C
Package Type
TO-39 Metal Can
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JANSF2N5153-Transistor Key Features
High voltage tolerance: Supports up to 120 V collector-emitter voltage, enabling use in demanding power switching applications.
Robust current handling: Can continuously conduct 1.5 A, providing reliable performance in medium-power amplification and switching circuits.
Wide gain range: DC current gain between 40 and 160 ensures versatility across amplification needs while maintaining signal integrity.
High-frequency operation: Gain bandwidth product of 100 MHz supports efficient high-speed switching and RF signal processing.
Military-grade reliability: Manufactured to JAN (Joint Army-Navy) standards, ensuring durability in harsh environments and extended lifecycle.
Thermal robustness: Junction temperature rating up to 200??C allows operation under elevated temperature conditions without degradation.
Standard TO-39 packaging: Metal can package offers improved heat dissipation and mechanical protection, suitable for rugged industrial installations.
Typical Applications
Power amplifier stages in military and aerospace communication systems, where stable gain and voltage endurance are critical.
Switching regulator circuits requiring reliable high-voltage transistor operation with fast response times.
Industrial control systems where ruggedness under temperature extremes and mechanical stress is mandatory.
Signal processing circuits in radar and instrumentation equipment utilizing the device??s high-frequency capabilities.
JANSF2N5153-Transistor Advantages vs Typical Alternatives
This transistor excels in applications demanding high voltage and current ratings combined with military-grade reliability. Compared to typical commercial transistors, it offers superior thermal tolerance and packaging robustness, enabling longer operational lifetimes in harsh environments. The extensive gain range and high-frequency operation provide engineers with design flexibility, ensuring improved signal fidelity and switching speeds in industrial and defense systems.
The JANSF2N5153 transistor is a military-specification device originally produced and qualified under stringent Joint Army-Navy (JAN) standards. These standards ensure enhanced durability, performance consistency, and environmental resistance. The transistor is commonly associated with established semiconductor manufacturers specializing in defense-grade components, offering assured traceability and compliance with MIL-PRF-19500 requirements. This product is ideal for engineers sourcing components with guaranteed reliability for mission-critical applications.
