JANSF2N5152L-Transistor Overview
The JANSF2N5152L is a high-performance NPN bipolar junction transistor (BJT) designed for industrial and commercial electronic applications requiring reliable switching and amplification. It features a robust collector-emitter voltage rating and a moderate current handling capability, making it suitable for medium-power circuits. Its low saturation voltage and fast switching characteristics ensure efficient operation in high-frequency environments. This transistor??s rugged construction complies with military standards, enhancing durability and stability under demanding conditions. Available through IC Manufacturer, it is ideal for engineers and sourcing specialists seeking a dependable transistor for precision control and signal processing tasks.
JANSF2N5152L-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 80 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1.5 A (continuous) |
| Power Dissipation (Ptot) | 1.2 W |
| DC Current Gain (hFE) | 40 to 160 |
| Transition Frequency (fT) | 80 MHz (typical) |
| Package Type | TO-18 Metal Can |
| Operating Temperature Range | -65??C to +200??C |
JANSF2N5152L-Transistor Key Features
- High Voltage Capability: Supports up to 60 V collector-emitter voltage, enabling operation in moderately high-voltage circuits without breakdown.
- Robust Current Handling: Continuous collector current rating of 1.5 A allows for effective switching and amplification in medium power applications.
- Wide Operating Temperature Range: Functional from -65??C to +200??C, ensuring reliable performance in harsh environmental conditions.
- Military-Grade Construction: The TO-18 metal can package provides superior thermal conductivity and mechanical protection, enhancing device longevity and stability.
Typical Applications
- Used in switching circuits for industrial controls and automation systems, where reliable medium power switching is critical for operational safety and efficiency.
- Signal amplification in audio and RF applications requiring moderate gain and bandwidth.
- Interface stages in precision measurement instruments, benefiting from low noise and stable gain characteristics.
- Power management circuits in military and aerospace electronics, leveraging its rugged design and wide temperature tolerance.
JANSF2N5152L-Transistor Advantages vs Typical Alternatives
This transistor offers a balance of voltage rating, current capacity, and gain that outperforms many standard BJTs in similar packages. Its military-grade TO-18 encapsulation enhances reliability and thermal performance compared to plastic-encapsulated alternatives. The extended temperature range and robust electrical characteristics make it a preferred choice for critical industrial and aerospace applications where consistent performance and durability are essential.
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JANSF2N5152L-Transistor Brand Info
The JANSF2N5152L is manufactured under stringent military standards, typically by established semiconductor suppliers specializing in high-reliability discrete components. This transistor is part of a family of devices designed for demanding environments and is often sourced from legacy manufacturers recognized for quality and consistency in transistor fabrication. The ??JAN?? prefix indicates Joint Army-Navy certification, confirming compliance with rigorous military specifications, making it suitable for defense and aerospace sectors. Its place in the product lineup is as a trusted, long-life NPN transistor for precision switching and amplification.
FAQ
What is the maximum collector current rating of the JANSF2N5152L transistor?
The maximum continuous collector current rating is 1.5 amperes. This allows the transistor to handle moderate power loads efficiently in switching and amplification roles without risk of damage under normal operating conditions.
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Can this transistor operate in high-temperature environments?
Yes, the device is rated for operation over a







