JANSF2N5151L-Transistor NPN Bipolar Junction Transistor in TO-92 Package – JANSF2N5151L

JANSF2N5151L-Transistor Overview

The JANSF2N5151L transistor is a high-performance NPN bipolar junction transistor (BJT) designed for industrial and military-grade applications requiring robust switching and amplification capabilities. It features a durable hermetic metal can package ensuring reliability under harsh environmental conditions. This transistor supports collector currents up to 1.5A and a collector-emitter voltage rating of 100V, making it suitable for medium power applications. With a gain bandwidth product optimized for fast switching, it provides efficient signal amplification while maintaining thermal stability. Engineers and sourcing specialists will appreciate its consistent electrical characteristics and quality assurance typical of IC Manufacturer standards.

JANSF2N5151L-Transistor Technical Specifications

JANSF2N5151L-Transistor Key Features

• High voltage and current handling: Supports up to 100 V collector-emitter voltage and 1.5 A collector current, enabling robust performance in power switching and amplification circuits.
• Wide operating temperature range: Reliable operation from -65??C to +200??C ensures suitability for harsh industrial and military environments.
• Hermetic metal can packaging: Offers superior protection against moisture and contaminants, enhancing long-term device reliability and stability.
• Consistent gain characteristics: DC current gain range of 40 to 320 allows designers flexibility in circuit design and amplification precision.

Typical Applications

• Power amplification in medium voltage industrial control systems, where stable operation and high gain are critical for signal integrity.
• Switching applications in automotive electronics requiring high current capacity and thermal resilience.
• Military and aerospace electronics demanding hermetically sealed components for reliable performance in extreme environments.
• Analog signal processing circuits, including audio amplifiers and sensor interfaces, benefiting from wide bandwidth and stable gain.

JANSF2N5151L-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its high voltage rating and broad operating temperature range, which outperform many standard BJTs. Its hermetic metal can packaging ensures enhanced reliability and longevity compared to plastic encapsulated alternatives. The device??s robust current handling and stable gain characteristics deliver superior accuracy and efficiency in demanding industrial and military applications, making it a preferred choice for engineers focused on durability and performance.

JANSF2N5151L-Transistor Brand Info

The JANSF2N5151L is manufactured under stringent military and industrial standards, often associated with established semiconductor producers specializing in high-reliability discrete components. The ??JAN?? prefix indicates compliance with Joint Army-Navy specifications, ensuring the device meets rigorous quality and performance criteria for defense and aerospace markets. This transistor??s heritage reflects decades of proven field reliability, making it a trusted part for engineers in mission-critical systems requiring consistent operation under challenging conditions.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current is 1.5 amperes, allowing the transistor to handle moderate power loads in switching and amplification roles without degradation.

How does the hermetic metal can packaging benefit this transistor?

The hermetic metal can protects the transistor from environmental factors such as moisture, dust, and mechanical stress, significantly improving its reliability and lifespan in harsh operating conditions.