JANSF2N5002-Transistor NPN Amplifier Transistor in TO-92 Package by JANSF2N

  • This transistor amplifies electrical signals, enabling improved control in electronic circuits.
  • It features a voltage rating suitable for handling high-power applications reliably.
  • The compact package design allows for efficient board space utilization in dense layouts.
  • Ideal for switching tasks in power supplies, it enhances energy management and system stability.
  • Manufactured to meet stringent quality standards, ensuring consistent performance over time.
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JANSF2N5002-Transistor Overview

The JANSF2N5002 transistor is a high-performance NPN bipolar junction transistor (BJT) designed for switching and amplification applications in industrial and electronic circuits. It offers reliable operation within specific voltage and current ratings, making it suitable for use in power control, signal processing, and general-purpose amplification tasks. The device features robust construction with a focus on durability and thermal stability, ensuring long-term performance in demanding environments. Engineers and sourcing specialists will appreciate its balance of gain, switching speed, and power handling. For comprehensive product and purchasing details, visit the IC Manufacturer website.

JANSF2N5002-Transistor Key Features

  • High Collector-Emitter Voltage Rating: Supports up to 500V, enabling use in high-voltage switching circuits with enhanced safety margins.
  • Collector Current Capacity: Handles continuous collector currents up to 0.15A, suitable for moderate power applications without overheating.
  • Low Saturation Voltage: Ensures efficient switching with minimal power loss and heat generation, improving overall circuit efficiency.
  • Reliable High Gain: Provides consistent current gain (hFE) in the range of 40 to 160, allowing flexible design options for amplification stages.

JANSF2N5002-Transistor Technical Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 500 V
Collector-Base Voltage VCBO 700 V
Emitter-Base Voltage VEBO 7 V
Collector Current (Continuous) IC 0.15 A
Power Dissipation Ptot 1.2 W
DC Current Gain hFE 40 to 160 ?C
Transition Frequency fT 50 MHz
Operating Junction Temperature TJ 200 ??C

JANSF2N5002-Transistor Advantages vs Typical Alternatives

This transistor offers superior high-voltage tolerance and a broad current gain range compared to many standard BJTs, making it ideal for applications requiring both voltage endurance and amplification flexibility. Its low saturation voltage reduces power dissipation during switching, enhancing energy efficiency. Additionally, the device??s thermal stability supports reliable long-term operation in harsh industrial environments, providing a distinct advantage over less robust alternatives.

Typical Applications

  • Switching circuits where high voltage endurance is necessary, including power supply regulation and relay driving. This transistor??s voltage and current ratings ensure dependable performance under such demanding conditions.
  • Signal amplification stages in industrial control systems, benefiting from its consistent current gain and frequency response.
  • General-purpose amplification in audio and instrumentation circuits, where linearity and reliability are critical.
  • Low to medium power switching applications in automotive and communication equipment, leveraging the device??s durability and switching efficiency.

JANSF2N5002-Transistor Brand Info

The JANSF2N5002 transistor is part of a legacy series produced by a reputable manufacturer known for delivering reliable, military-grade semiconductor components. Designed to meet stringent quality and performance standards, this transistor exemplifies robust engineering suitable for industrial, aerospace, and defense markets. Its brand heritage ensures consistent availability and support, underlining its role as a trusted component in critical electronic designs.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The maximum collector-emitter voltage for this device is 500 volts. This high voltage rating allows it to be used safely in circuits requiring substantial voltage handling capabilities, such as high-voltage switching and power regulation applications.

What kind of current gain can be expected?

The transistor offers a DC current gain (hFE) range from 40 to 160, which means it can provide sufficient amplification for a variety of signal levels, making it versatile for different amplification and switching needs.

Is this transistor suitable for high-frequency applications?

With a transition frequency (fT) of approximately 50 MHz, this transistor can perform adequately in moderate frequency applications, including many industrial and communication circuits where switching speed and frequency response are important.

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What is the power dissipation rating of this transistor?

The device can dissipate up to 1.2 watts of power under normal operating conditions. This rating indicates its capability to handle moderate power loads without overheating, provided proper heat sinking or thermal management is applied.

Can this transistor operate reliably at high temperatures?

Yes, the transistor is rated to operate at junction temperatures up to 200??C, which ensures reliable performance in harsh thermal environments commonly encountered in industrial and automotive applications.

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