JANSF2N3700-Transistor Overview
The JANSF2N3700 transistor is a high-performance bipolar junction transistor (BJT) designed for reliable switching and amplification in industrial and military applications. Featuring a robust construction compliant with JEDEC standards, it supports moderate current and voltage levels with dependable gain characteristics. This device is suitable for demanding environments requiring stable operation under varying thermal conditions. The transistor??s versatility and ruggedness make it well-suited for power regulation, signal amplification, and switching circuits. Sourced from a reputable IC Manufacturer, it meets stringent quality requirements necessary for long-term system reliability.
JANSF2N3700-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 200 mA |
| Power Dissipation (Ptot) | 625 mW (at 25??C) |
| DC Current Gain (hFE) | 40 to 300 (depending on operating point) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Junction Temperature (TJ) | Up to 200??C |
| Package Type | TO-18 Metal Can |
| Noise Figure | Low |
JANSF2N3700-Transistor Key Features
- High voltage tolerance: Supports up to 60 V collector-emitter voltage, enabling use in medium-power switching applications.
- Wide gain range: DC current gain from 40 to 300 allows flexibility in amplification and switching performance tuning.
- Robust metal can package: TO-18 hermetic sealing provides excellent thermal dissipation and environmental protection for enhanced reliability.
- High transition frequency: Typical fT of 100 MHz supports moderate frequency analog and switching circuits with improved efficiency.
Typical Applications
- Signal amplification in analog circuits requiring stable gain and low noise operation, such as audio and sensor interfaces.
- Switching elements in power regulation circuits where moderate current and voltage handling are necessary.
- Military and aerospace electronic systems where ruggedness and hermetic packaging are critical for long-term durability.
- General-purpose transistor use in industrial control circuits including relay drivers and logic interface stages.
JANSF2N3700-Transistor Advantages vs Typical Alternatives
This transistor offers a reliable balance of voltage and current handling with a hermetically sealed metal package, making it more robust against environmental stressors compared to plastic-encapsulated alternatives. Its wide gain range and high transition frequency improve circuit design flexibility and efficiency. The device??s proven performance in industrial and military settings ensures dependable operation, providing sourcing specialists and engineers confidence in system longevity and quality.
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JANSF2N3700-Transistor Brand Info
The JANSF2N3700 transistor is a military-grade variant of the widely used 2N3700 series, produced by established semiconductor manufacturers specializing in high-reliability components. The “JAN” prefix indicates compliance with Joint Army-Navy standards, certifying the device for defense and aerospace applications. This ensures stringent quality controls and extended temperature range operation. The device is commonly stocked and distributed by authorized industrial semiconductor suppliers, supporting engineers and sourcing professionals requiring components with verified traceability and performance consistency.
FAQ
What is the maximum collector current rating of the JANSF2N3700 transistor?
The maximum continuous collector current for this transistor is 200 mA. This current rating allows it to be used safely in moderate power amplification and switching circuits without risk of damage under specified conditions.
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Can this transistor operate at high temperatures?
Yes, the transistor is rated for junction temperatures up to 200??C, making it suitable for applications exposed to elevated thermal conditions, such as industrial or military environments.
What type of package does the JANSF2N3700 come in?
This device is housed







