JANSF2N3019-Transistor NPN Amplifier Transistor in TO-39 Metal Can Package

JANSF2N3019-Transistor Overview

The JANSF2N3019 transistor is a high-performance NPN silicon device designed for medium-power switching and amplification applications. Featuring a robust collector-to-emitter voltage rating and reliable gain characteristics, this transistor is well suited for industrial control circuits, audio amplification, and general-purpose switching. Its construction ensures consistent performance under demanding conditions, making it a dependable choice for engineers and sourcing specialists seeking durability and efficiency. The device integrates seamlessly into various analog and digital electronic systems, providing stable operation and enhanced signal integrity. For detailed sourcing and technical support, visit IC Manufacturer.

JANSF2N3019-Transistor Technical Specifications

JANSF2N3019-Transistor Key Features

• High Collector-Emitter Voltage: Supports up to 100 V, enabling operation in medium-power circuits with high voltage requirements.
• Robust Collector Current Capacity: Handles continuous currents up to 2 A, ensuring reliable switching and amplification under load.
• Wide Gain Range: DC current gain from 40 to 160 offers flexibility for various amplification needs, improving signal control.
• Thermal Stability: Rated for junction temperatures up to 200 ??C, enhancing reliability in high-temperature industrial environments.
• Metal TO-39 Package: Provides excellent heat dissipation and mechanical durability for long-term operational stability.

Typical Applications

• Industrial control systems requiring reliable medium-power switching and amplification with high voltage tolerance and thermal stability.
• Audio amplifier stages where consistent gain and low distortion are critical to signal fidelity.
• Power driver circuits for relay and solenoid control that demand robust current handling and voltage endurance.
• General-purpose switching in analog and digital circuitry where dependable transistor performance is essential.

JANSF2N3019-Transistor Advantages vs Typical Alternatives

This transistor offers a compelling balance of high voltage tolerance and current capacity compared to typical alternatives in the same class. Its broad gain range and excellent thermal endurance provide enhanced reliability and signal stability, reducing the risk of failure in industrial and audio applications. The TO-39 metal package further improves heat dissipation compared to plastic encapsulated devices, ensuring longer operational lifespan and improved integration in harsh environments.

JANSF2N3019-Transistor Brand Info

The JANSF2N3019 is a military-grade variant of the widely recognized 2N3019 transistor, originally developed and standardized by JEDEC and commonly manufactured by leading semiconductor producers. It conforms to stringent quality and reliability standards for aerospace and defense applications, reflecting its rugged design and extended temperature range. This transistor is part of a legacy series known for dependable medium-power amplification and switching, making it a trusted component in critical industrial and military electronic systems.

FAQ

What is the maximum collector-emitter voltage rating of this transistor?

The maximum collector-emitter voltage (V_CEO) rating is 100 volts. This allows the transistor to operate safely in circuits with medium to high voltage requirements without risk of breakdown.

What package type does the transistor use, and why is it important?

This device is housed in a TO-39 metal can package, which provides superior thermal conductivity and mechanical protection compared to plastic packages. This