JANSF2N2907AUA-Transistor Overview
The JANSF2N2907AUA-Transistor is a high-performance PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It features robust electrical characteristics suitable for medium power and low-frequency designs, making it ideal for industrial and commercial electronic systems. With reliable gain and voltage ratings, this transistor ensures efficient current control and stable operation under various load conditions. Engineered for durability and consistent performance, it is a preferred choice for engineers requiring dependable analog control elements. For detailed specifications and sourcing, visit IC Manufacturer.
JANSF2N2907AUA-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vce) | 60 V |
| Collector Current (Ic) | 600 mA |
| Power Dissipation (Pc) | 625 mW |
| Gain Bandwidth Product (fT) | 100 MHz |
| DC Current Gain (hFE) | 100 to 300 (typical) |
| Transition Frequency | 100 MHz |
| Package Type | TO-18 Metal Can |
| Operating Temperature Range | -55??C to +150??C |
JANSF2N2907AUA-Transistor Key Features
- High Voltage Capability: Supports up to 60 V collector-emitter voltage, ensuring reliable operation in medium voltage circuits.
- Moderate Current Handling: Can manage collector currents up to 600 mA, suitable for a variety of switching and amplification tasks.
- Wide Frequency Response: 100 MHz gain bandwidth product enables efficient signal amplification in low to medium frequency ranges.
- Robust Metal Can Package: TO-18 metal enclosure offers enhanced thermal dissipation and mechanical durability for industrial environments.
Typical Applications
- Signal amplification in audio and low-frequency analog circuits, benefiting from stable gain and low noise characteristics.
- Switching components in power management and control systems requiring reliable transistor switching at moderate voltages and currents.
- General-purpose transistor use in industrial automation devices, where consistent performance under varying temperatures is critical.
- Driver stages for relay and solenoid control circuits, leveraging the transistor??s current handling and voltage ratings.
JANSF2N2907AUA-Transistor Advantages vs Typical Alternatives
This transistor delivers a balance of voltage, current handling, and frequency response that outperforms many generic PNP transistors in similar classes. Its metal can packaging enhances thermal management and reliability, while the device??s gain characteristics provide stable amplification and switching. These advantages contribute to improved circuit efficiency, longer operational life, and better performance consistency compared to plastic encapsulated alternatives.
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JANSF2N2907AUA-Transistor Brand Info
The JANSF2N2907AUA is part of the JAN (Joint Army-Navy) series, reflecting military-grade quality standards for semiconductor devices. This transistor is manufactured under strict quality and reliability criteria, making it suitable for defense, aerospace, and industrial applications where ruggedness and long-term stability are essential. The JAN designation ensures compliance with stringent temperature, vibration, and electrical stress tests, offering sourcing specialists and engineers confidence in mission-critical deployments.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current for this transistor is 600 mA. This rating defines the highest continuous current the device can safely handle without risk of damage or performance degradation under specified conditions.
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Can this transistor operate at high temperatures?
Yes, the device supports an operating temperature range from -55??C up to +150??C, making it suitable for applications in harsh or variable thermal environments common in industrial and military electronics.
What type of package does this transistor use and why is it beneficial?
This transistor comes in a TO-18 metal can package, which provides superior thermal conductivity and mechanical protection compared to plastic packages. This improves heat dissipation and enhances device reliability in demanding applications.
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Is this transistor suitable for high-frequency applications?
While primarily designed






