The JANSF2N2907A is a high-quality PNP bipolar junction transistor designed for general-purpose amplification and switching applications. Known for its robustness and reliability, it features a complementary structure optimized for medium-power operation. This transistor provides a maximum collector current of 600mA and a collector-emitter voltage rating of 60V, making it suitable for diverse industrial electronics tasks. The device??s stable gain, low saturation voltage, and fast switching capabilities enable efficient performance in analog and digital circuits. Engineers and sourcing specialists will find the JANSF2N2907A an excellent choice where dependable transistor operation is critical. For more detailed semiconductor components, visit IC Manufacturer.
JANSF2N2907A-Transistor Technical Specifications
Parameter
Specification
Transistor Type
PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)
60 V
Collector-Base Voltage (VCBO)
60 V
Emitter-Base Voltage (VEBO)
5 V
Collector Current (IC)
600 mA
Power Dissipation (Ptot)
800 mW (at 25??C)
DC Current Gain (hFE)
100 to 300 (typical range)
Transition Frequency (fT)
100 MHz (typical)
Package Type
TO-18 Metal Can
JANSF2N2907A-Transistor Key Features
High Collector Current Capacity: Supports up to 600mA, enabling efficient operation in medium-power switching and amplification circuits.
Robust Voltage Ratings: Withstands up to 60V collector-emitter voltage, ensuring durability in demanding industrial environments.
Wide DC Current Gain Range: Provides gain between 100 and 300, facilitating reliable signal amplification with consistent performance.
Fast Switching Speed: Transition frequency of approximately 100 MHz supports high-frequency applications and improved circuit responsiveness.
Durable TO-18 Package: Metal can packaging offers enhanced thermal dissipation and mechanical protection, improving long-term reliability.
Typical Applications
General-purpose amplification in audio and signal processing circuits, where moderate power and fast response are required for effective performance.
Switching components in industrial control systems, providing reliable operation in load switching and relay-driving tasks.
Complementary transistor pairs in push-pull amplifier designs, offering balanced performance in analog output stages.
Low to medium power voltage regulator circuits, ensuring stable voltage delivery with minimal distortion or signal loss.
JANSF2N2907A-Transistor Advantages vs Typical Alternatives
This transistor offers a superior combination of moderate power handling and fast switching speed compared to many general-purpose PNP transistors. Its 60V voltage rating and 600mA collector current make it more robust for industrial applications requiring reliable switching and amplification under varying loads. The metal TO-18 package enhances thermal management and mechanical stability, which improves longevity and performance consistency versus plastic-packaged alternatives.
The JANSF2N2907A is a military-grade, JAN (Joint Army-Navy) specified variant of the widely used 2N2907A transistor. Manufactured under strict quality control standards, it meets rigorous reliability and performance criteria for defense and aerospace applications. This JAN designation indicates enhanced testing and screening to ensure superior electrical characteristics and durability. As a trusted semiconductor component, it is supplied by multiple reputable manufacturers specializing in ruggedized bipolar junction transistors for critical industrial and military electronics.
