JANSF2N2906AUBC/TR Overview
The JANSF2N2906AUBC/TR is a high-performance PNP bipolar junction transistor designed for general-purpose amplification and switching applications. With its robust construction and reliable electrical characteristics, it supports medium power and low-frequency operations efficiently. The device features a maximum collector current of 600mA and a collector-emitter voltage rating of 40V, making it ideal for industrial control circuits, signal amplification, and power regulation. Supplied in a TO-18 hermetic metal can package, it ensures enhanced thermal dissipation and durability under harsh environmental conditions. This transistor is a dependable choice for engineers seeking precision and longevity in demanding applications. Visit IC Manufacturer for more details.
JANSF2N2906AUBC/TR Key Features
- High collector current capability: Supports up to 600mA, enabling efficient handling of medium power loads in switching and amplification tasks.
- Moderate voltage ratings: Collector-emitter voltage of 40V and collector-base voltage of 60V provide safe operation margins for typical industrial circuits.
- Low transition frequency (fT): 100MHz ensures stable performance in low to medium frequency analog signal applications.
- Hermetically sealed TO-18 package: Enhances thermal management and reliability in environments prone to contaminants and temperature variations.
- Gain bandwidth product: Offers a DC current gain (hFE) between 40 and 300, supporting variable amplification requirements.
- Complementary transistor compatibility: Designed as a PNP counterpart to popular NPN devices, facilitating balanced circuit design.
- Efficient switching performance: Suitable for switching circuits with guaranteed maximum collector dissipation of 800mW, reducing power losses.
JANSF2N2906AUBC/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 600 | mA |
| Collector Dissipation (PC) | 800 | mW |
| DC Current Gain (hFE) | 40 to 300 | Unitless |
| Transition Frequency (fT) | 100 | MHz |
| Package Type | TO-18 | Hermetic Metal Can |
| Operating Temperature Range | -55 to +200 | ??C |
JANSF2N2906AUBC/TR Advantages vs Typical Alternatives
This transistor offers enhanced reliability with its hermetic TO-18 package, providing superior protection compared to plastic-encapsulated alternatives. Its balanced voltage and current ratings make it versatile for medium power applications, while the wide gain range supports flexible circuit design. The device??s stable performance across a broad temperature range ensures dependable operation in industrial environments, making it a preferred choice over standard PNP transistors lacking such robustness and precision.
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Typical Applications
- General-purpose amplification in audio and low-frequency signal processing circuits, providing stable gain and low distortion.
- Switching elements in industrial control systems where reliable medium power handling is essential.
- Complementary transistor pairs in push-pull amplifier configurations for balanced signal output.
- Driver stages for relays and solenoids requiring moderate current and voltage handling capabilities.
JANSF2N2906AUBC/TR Brand Info
The JANSF2N2906AUBC/TR belongs to a family of military-grade bipolar junction transistors known for their stringent quality and reliability standards. This product line emphasizes durability and consistent electrical performance under demanding conditions, making it widely used in aerospace, defense, and high-reliability industrial sectors. Its heritage as a JAN (Joint Army-Navy) device guarantees compliance with rigorous testing and traceability requirements, ensuring dependable operation in mission-critical applications.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current rating is 600mA, allowing the transistor to handle medium power loads effectively in switching and amplification applications without compromising reliability.
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What type of package does this transistor use, and why is it important?
This device is housed in a TO-18 hermetically sealed metal can package. This packaging provides excellent thermal dissipation and protection against environmental contaminants, which is critical for long-term reliability in industrial and military environments.
Can this transistor be used for high-frequency applications?
The transistor has a transition frequency (fT) of 100MHz, which makes it suitable for low to medium frequency applications but limits its effectiveness in very high-frequency or RF circuits.
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What is the typical DC current gain range for this device?
The DC current gain (hFE) ranges from 40 to 300, providing flexibility in amplification levels for various circuit requirements and enabling designers to optimize performance as needed.
Is this transistor suitable for use in harsh temperature environments?
Yes, the operating temperature range spans from -55??C to +200??C, ensuring stable electrical characteristics and reliable performance in extreme temperature conditions often found in industrial and defense applications.
