JANSF2N2369AUBC/TR NPN Transistor by JAN | High Gain Switching | TO-92 Package

  • The JANSF2N2369AUBC/TR transistor provides reliable switching and amplification for various electronic circuits.
  • Its high voltage rating ensures stable operation under demanding electrical conditions, enhancing overall circuit performance.
  • The compact package type offers board-space savings, enabling more efficient use of PCB layout in tight assemblies.
  • Ideal for power control applications, this component supports effective management of current flow in automotive systems.
  • Manufactured to meet rigorous quality standards, it delivers consistent performance and long-term reliability in the field.
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产品上方询盘

JANSF2N2369AUBC/TR Overview

The JANSF2N2369AUBC/TR is a high-performance NPN bipolar junction transistor designed for switching and amplification in industrial and automotive applications. It features a robust gain bandwidth and is optimized for medium power handling with excellent switching speed. Its TO-92 plastic package ensures reliable durability in harsh environments, making it ideal for embedded system control circuits and signal processing. This transistor offers consistent performance with low saturation voltage and high current gain, supporting efficient power management and signal integrity. Available through IC Manufacturer, it suits engineers and sourcing specialists seeking dependable semiconductor components for demanding electronic designs.

JANSF2N2369AUBC/TR Key Features

  • High Current Gain (hFE): Enhances amplification efficiency, allowing precise signal control with minimal input drive.
  • Low Collector-Emitter Saturation Voltage (VCE(sat)): Reduces power loss and heat dissipation, improving overall circuit efficiency.
  • Fast Switching Speed: Supports rapid on/off transitions, critical for timing-sensitive switching and digital logic applications.
  • TO-92 Plastic Package: Provides mechanical robustness and thermal stability, ideal for embedded and industrial environments.

JANSF2N2369AUBC/TR Technical Specifications

Parameter Specification Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.8 A
Power Dissipation (Ptot) 0.625 W
Transition Frequency (fT) 100 MHz
DC Current Gain (hFE) 100?C300 ?C
Operating Temperature Range -55 to +150 ??C

JANSF2N2369AUBC/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of high gain, fast switching, and robust voltage handling that outperforms many standard NPN devices. Its low saturation voltage minimizes power loss, which enhances energy efficiency compared to typical alternatives. Additionally, the TO-92 package ensures reliable thermal management and ruggedness, making it a superior choice for applications requiring durable, high-speed switching and signal amplification.

Typical Applications

  • Switching regulators and power management circuits where efficient current handling and fast switching are essential for performance and energy savings.
  • Audio amplification in embedded systems requiring low distortion and stable gain characteristics.
  • Signal processing modules in automotive control systems demanding reliable operation under temperature extremes.
  • General-purpose switching in industrial automation, including relay drivers and interface circuits.

JANSF2N2369AUBC/TR Brand Info

The JANSF2N2369AUBC/TR is a product within the JAN (Joint Army-Navy) series, known for its military-grade reliability and stringent quality standards. This transistor is manufactured under rigorous testing protocols to ensure consistent performance in critical applications. Its heritage in defense and industrial sectors guarantees enhanced durability, long-term availability, and compliance with demanding environmental requirements.

FAQ

What is the maximum collector current for this transistor?

The maximum continuous collector current is rated at 0.8 amperes, ensuring it can handle moderate power loads suitable for switching and amplification without risk of damage under specified operating conditions.

Can this transistor operate at high frequencies?

Yes, with a transition frequency (fT) of 100 MHz, this device supports high-speed switching and amplification, making it appropriate for applications requiring rapid signal transitions.

What is the typical power dissipation for this device?

The transistor can dissipate up to 0.625 watts of power, which must be managed through proper heat sinking or PCB layout to maintain device reliability and prevent thermal runaway.

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产品中间询盘

Is the transistor suitable for automotive environments?

Its wide operating temperature range from -55??C to +150??C and robust packaging make it well-suited for automotive and industrial environments where temperature extremes and mechanical stress are common.

What package does the transistor come in, and why is it important?

It is housed in a TO-92 plastic package, which provides mechanical protection, ease of handling, and decent thermal performance, ideal for through-hole mounting in a variety of circuit board designs.

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