JANSF2N2369AUA-Transistor Overview
The JANSF2N2369AUA transistor is a silicon NPN bipolar junction transistor designed for high-frequency switching and amplification in industrial and commercial electronics. Offering reliable performance with a maximum collector current of 0.8A and a collector-emitter voltage rating of 60V, it is suited for medium power applications. Its high transition frequency and low saturation voltage make it ideal for fast switching circuits and amplifier stages. The device conforms to military standards, ensuring robustness and long-term reliability. Available from IC Manufacturer, it is engineered for demanding environments requiring consistent electrical characteristics and rugged construction.
JANSF2N2369AUA-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Polarity | NPN | – |
| Collector-Emitter Voltage (Vceo) | 60 | V |
| Collector-Base Voltage (Vcbo) | 80 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 0.8 | A |
| Power Dissipation (Pc) | 0.8 | W |
| Transition Frequency (fT) | 100 | MHz |
| DC Current Gain (hFE) | 40 to 300 | – |
| Operating Temperature Range | -65 to +200 | ??C |
JANSF2N2369AUA-Transistor Key Features
- High transition frequency (100 MHz): Enables efficient operation in RF and high-speed switching circuits, improving signal integrity and response times.
- Wide voltage ratings: Collector-emitter voltage up to 60V supports use in moderate voltage power applications without compromising transistor reliability.
- Military-grade reliability: Qualified to JAN standards ensuring robust performance in harsh or critical environments for aerospace and defense.
- Low saturation voltage: Reduces power losses and heat dissipation in switching applications, enhancing overall energy efficiency.
Typical Applications
- RF amplifier stages in communication systems requiring fast switching and stable gain over wide frequency ranges.
- General-purpose switching devices in industrial control circuits where reliability and moderate power handling are essential.
- Signal amplification in instrumentation and measurement equipment, benefiting from linearity and gain stability.
- Military and aerospace electronics demanding components that meet stringent environmental and electrical performance standards.
JANSF2N2369AUA-Transistor Advantages vs Typical Alternatives
This transistor offers a superior balance of transition frequency, voltage handling, and power dissipation compared to many general-purpose BJTs. Its military-grade certification guarantees enhanced reliability and robustness, making it preferable in critical applications. Lower saturation voltage improves efficiency, while a broad operating temperature range ensures consistent operation in demanding environments. These factors combine to deliver more stable performance and longer operational life than typical commercial transistors.
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JANSF2N2369AUA-Transistor Brand Info
The JANSF2N2369AUA is a product typically associated with manufacturers specializing in military and aerospace-grade semiconductor components. The JAN (Joint Army-Navy) prefix indicates compliance with stringent military standards for quality, reliability, and environmental tolerance. These devices are produced under rigorous quality assurance processes, including controlled manufacturing environments and extensive testing protocols. The transistor is part of a lineage of 2N2369 series devices well-regarded for dependable switching and amplification in harsh conditions.
FAQ
What is the maximum collector current rating of the JANSF2N2369AUA transistor?
The maximum collector current for this transistor is 0.8 amperes. This rating defines the highest continuous current the device can safely handle
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