JANSF2N2369AU/TR NPN Transistor by JAN | High Gain Amplifier | TO-92 Package

  • JANSF2N2369AU/TR serves as a robust transistor for signal amplification and switching tasks in electronic circuits.
  • Its key electrical specifications ensure stable operation under varied load conditions, enhancing circuit performance.
  • The compact package type reduces board space, facilitating efficient layout in dense electronic assemblies.
  • Ideal for use in power regulation modules where reliable switching improves energy management and system stability.
  • Manufactured to meet strict quality standards, ensuring dependable operation and long-term reliability in applications.
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产品上方询盘

JANSF2N2369AU/TR Overview

The JANSF2N2369AU/TR is a high-performance NPN transistor designed for switching and amplification in industrial and commercial electronic applications. Rated for collector currents up to 0.8 A and with a voltage rating of 30 V, this device offers reliable performance in medium power circuits. Its complementary low power dissipation and fast switching capabilities make it suitable for precision analog circuits and digital switching. The transistor is housed in a TO-18 metal can package, ensuring excellent thermal management and durability. For engineers and sourcing specialists seeking a dependable transistor with consistent characteristics, the JANSF2N2369AU/TR delivers proven quality from IC Manufacturer.

JANSF2N2369AU/TR Key Features

  • Collector current (Ic) up to 0.8 A: Enables handling of medium power loads, making it suitable for a wide range of switching applications.
  • Collector-emitter voltage (Vceo) of 30 V: Provides adequate voltage tolerance for most low to medium voltage circuits.
  • Low saturation voltage: Ensures efficient switching with minimal power loss and improved circuit efficiency.
  • TO-18 metal can package: Offers superior thermal dissipation and mechanical reliability compared to plastic packages.
  • Gain bandwidth product (fT) around 100 MHz: Supports high-frequency operation for improved amplification and switching speed.
  • Complementary low base current: Reduces drive power requirements, enhancing overall system efficiency.

JANSF2N2369AU/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vceo) 30 V
Collector Current (Ic) 0.8 A
Power Dissipation (Ptot) 0.8 W
Transition Frequency (fT) 100 MHz
DC Current Gain (hFE) 40 to 300 (Typical range)
Collector-Base Voltage (Vcbo) 60 V
Emitter-Base Voltage (Vebo) 5 V
Package Type TO-18 Metal Can

JANSF2N2369AU/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage tolerance and current capacity that outperforms many general-purpose transistors in similar packages. Its metal can TO-18 housing enhances thermal dissipation and reliability, making it more robust in demanding environments. The device’s low saturation voltage and high transition frequency ensure improved switching efficiency and faster response times compared to common plastic-encapsulated alternatives, providing engineers with a dependable and efficient solution.

Typical Applications

  • Switching circuits in industrial control systems where reliable medium power handling is critical for actuators or signal conditioning.
  • Analog amplification stages in audio or sensor signal processing requiring stable gain and low noise characteristics.
  • High-speed switching applications such as pulse generation or digital logic interface circuits.
  • General-purpose transistor use in test equipment and instrumentation due to its balanced electrical characteristics and robust packaging.

JANSF2N2369AU/TR Brand Info

The JANSF2N2369AU/TR is part of the JANS series, a professional-grade transistor line produced by the original manufacturer known for stringent quality standards. This series is recognized for its military-grade reliability and consistent performance under harsh conditions. The product is supplied in a hermetically sealed TO-18 package, ensuring long-term stability and minimal environmental impact on device parameters. This makes it a preferred choice for engineers requiring precision components with a proven track record.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a maximum collector current of 0.8 A, which allows it to handle medium power applications effectively without compromising reliability or thermal performance.

Can this device be used in high-frequency applications?

Yes, with a transition frequency (fT) of approximately 100 MHz, this transistor is suitable for high-frequency amplification and fast switching circuits commonly found in RF and digital systems.

What package type does the transistor come in, and why is it important?

The device is housed in a TO-18 metal can package, which offers superior thermal dissipation and mechanical robustness compared to plastic packages. This enhances reliability in industrial and military environments.

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产品中间询盘

Is this transistor suitable for low voltage switching applications?

Yes, with a collector-emitter voltage rating of 30 V, it is well-suited for low to medium voltage switching tasks, providing efficient operation and protection against voltage stress.

What typical gain can be expected from this transistor?

The DC current gain (hFE) typically ranges from 40 to 300, depending on operating conditions, making it versatile for amplification needs in various analog circuits.

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