JANSF2N2222AUA NPN Transistor by JAN | General Purpose Amplifier | TO-92 Package

  • This transistor serves as a general-purpose NPN switching device, enabling efficient control of electronic circuits.
  • Its maximum collector current supports reliable operation under typical load conditions, ensuring stable performance.
  • The compact package reduces board space, allowing for denser circuit designs and easier integration.
  • Ideal for switching and amplification tasks in consumer electronics, it improves circuit responsiveness and control.
  • Manufactured to meet standard quality tests, it offers dependable performance over extended use.
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JANSF2N2222AUA Overview

The JANSF2N2222AUA is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It offers a robust collector current capacity of up to 800 mA and a collector-emitter voltage rating of 40 V. This transistor is built to meet stringent military standards, ensuring reliability and durability in demanding industrial environments. Its complementary features make it ideal for use in amplification circuits, low-noise stages, and switching functions where precision and consistency are critical. Manufactured by IC Manufacturer, it delivers dependable performance for engineers and sourcing specialists seeking quality and compliance in semiconductor components.

JANSF2N2222AUA Key Features

  • High Collector Current: Supports up to 800 mA collector current, enabling handling of moderate power loads efficiently.
  • Voltage Ratings: Collector-emitter voltage of 40 V and collector-base voltage of 75 V, providing wide operational margins for various circuit designs.
  • Military Specification Compliance: Qualified to JANS standards ensures enhanced reliability and robustness in harsh environments.
  • Low Saturation Voltage: Allows for improved switching performance and reduced power loss in switching applications.

JANSF2N2222AUA Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 800 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100?C300 (typical)
Transition Frequency (fT) 250 MHz
Operating Temperature Range -55 to +150 ??C

JANSF2N2222AUA Advantages vs Typical Alternatives

This transistor offers superior reliability due to its military-grade qualification, making it more robust compared to commercial-grade alternatives. Its higher collector current rating and low saturation voltage contribute to efficient switching and amplification. The wide operating temperature range ensures stable performance in extreme environments, providing a dependable choice for engineers prioritizing durability and consistent electrical characteristics in industrial and defense applications.

Typical Applications

  • Signal amplification in audio and RF circuits, where low noise and high gain are essential for clear signal processing.
  • Switching devices in industrial control circuits requiring reliable operation under variable load conditions.
  • Driver stages in relay and solenoid controls, leveraging the high collector current capacity for effective actuation.
  • General-purpose transistor applications in aerospace and military electronics due to its rugged qualification standard.

JANSF2N2222AUA Brand Info

The JANSF2N2222AUA is part of the JANS series, representing a line of military specification transistors known for their durability and precision. Manufactured under strict quality controls, this product meets stringent JANS requirements, assuring consistent performance in mission-critical applications. The brand is recognized for delivering reliable semiconductor components tailored to the needs of defense, aerospace, and industrial sectors, where operational integrity and long-term stability are paramount.

FAQ

What is the maximum collector current for this transistor?

The device supports a maximum collector current of 800 mA, allowing it to handle moderate power loads effectively in various amplification and switching applications.

Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency (fT) of 250 MHz, it is capable of functioning efficiently in high-frequency circuits such as RF amplifiers and driver stages.

What are the voltage limitations of this transistor?

It has a collector-emitter voltage rating of 40 V and a collector-base voltage rating of 75 V, enabling it to operate safely within these voltage boundaries without damage.

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Can this transistor operate in extreme temperature environments?

Yes, it supports an operating temperature range from -55??C to +150??C, making it suitable for harsh environments found in military and industrial applications.

What standards does this transistor comply with?

This transistor is qualified under JANS military specifications, ensuring enhanced reliability and performance consistency, especially in defense and aerospace sectors.

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