JANSE2N2919-Transistor by JANSE | NPN Amplifier Transistor | TO-92 Package

  • This transistor amplifies electrical signals, enabling precise control in various circuit designs.
  • High current handling ensures stable operation under demanding load conditions, enhancing performance.
  • The compact package reduces board space, facilitating efficient layouts in size-constrained devices.
  • Ideal for switching applications, it improves energy efficiency and responsiveness in power management circuits.
  • Manufactured under strict quality standards, it delivers consistent reliability for long-term use.
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JANSE2N2919-Transistor Overview

The JANSE2N2919 transistor is a robust NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Offering reliable performance with a maximum collector current of 800mA and a collector-emitter voltage rating of 40V, it suits a variety of industrial and consumer electronics circuits. Its medium power handling capability enables effective use in audio amplifiers, driver stages, and low- to medium-power switching tasks. Manufactured following industry standards, this transistor ensures consistent gain and dependable operation under typical environmental conditions. For sourcing and detailed specifications, visit IC Manufacturer.

JANSE2N2919-Transistor Key Features

  • High Collector Current: Supports up to 800mA, enabling reliable switching and amplification in medium-power circuits.
  • Voltage Handling: Collector-Emitter voltage rating of 40V ensures suitability for a wide range of low-to-medium voltage applications.
  • Good Current Gain (hFE): Typical gain values between 40 and 300 support efficient signal amplification with minimal distortion.
  • Fast Switching Speed: Capable of switching at frequencies up to 100MHz, useful for high-speed signal processing and driver applications.

JANSE2N2919-Transistor Technical Specifications

Parameter Value
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vce) 40 V (max)
Collector Current (Ic) 800 mA (max)
Power Dissipation (Pc) 625 mW (max)
Transition Frequency (fT) 100 MHz (typical)
Current Gain (hFE) 40 to 300 (depending on Ic)
Base-Emitter Voltage (Vbe) 5 V (max)
Operating Temperature Range -65??C to +200??C

JANSE2N2919-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of current capacity and voltage tolerance that outperforms many general-purpose BJTs in similar classes. Its wide operating temperature range and high transition frequency provide reliable performance in demanding industrial environments and rapid switching applications. The consistent current gain minimizes signal distortion, enhancing accuracy in amplification tasks compared to lower-grade alternatives.

Typical Applications

  • Audio amplification circuits requiring medium power handling and low distortion, suitable for consumer and industrial sound systems.
  • Switching devices in power management and relay driver circuits for industrial automation systems.
  • Signal amplification stages in instrumentation and measurement equipment where linearity and gain stability are important.
  • General purpose electronic circuits including voltage regulation, driver stages, and low-frequency oscillators.

JANSE2N2919-Transistor Brand Info

The JANSE2N2919 transistor is produced by a reputable manufacturer specializing in semiconductor components for industrial and commercial use. This product line is known for adherence to strict quality standards and testing protocols, ensuring consistent performance in both prototyping and mass production environments. The transistor??s design reflects a commitment to reliability, making it a preferred choice among engineers and sourcing specialists for medium power transistor needs.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a maximum collector current of 800mA, allowing it to handle moderate power loads in switching and amplification applications without compromising device integrity.

Can this transistor operate at high frequencies?

Yes, it features a transition frequency (fT) of approximately 100MHz, making it suitable for high-speed switching and signal amplification tasks in various electronic circuits.

What is the typical voltage rating between collector and emitter?

This device can withstand a collector-emitter voltage of up to 40V, which makes it appropriate for circuits operating at low to medium voltage levels.

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In which temperature range can the transistor reliably operate?

The transistor is rated for continuous operation between -65??C and +200??C, ensuring stable performance across a wide range of environmental conditions.

How does the current gain vary with collector current?

The current gain (hFE) ranges from 40 to 300 depending on the collector current, providing flexibility in amplification levels for different circuit requirements.

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