JANSE2N2907AL-Transistor PNP Amplifier Transistor in TO-92 Package by JANSE2N

  • This transistor enables efficient current amplification, improving signal control in electronic circuits.
  • Featuring a key specification that ensures stable performance under varying electrical loads.
  • The compact package design allows for board-space savings in densely packed assemblies.
  • Ideal for switching applications in power management, enhancing overall device responsiveness.
  • Manufactured with quality controls to ensure consistent reliability over extended operational periods.
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JANSE2N2907AL-Transistor Overview

The JANSE2N2907AL-Transistor is a high-performance PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It offers reliable operation with a maximum collector current rating suitable for medium power tasks. Featuring a robust voltage rating and a complementary configuration to the widely used 2N2222 NPN transistor, it enables seamless integration in push-pull amplifier stages and switching circuits. The device’s moderate gain and frequency response make it ideal for industrial control, signal processing, and driver stages in electronic systems. Available through IC Manufacturer, this transistor supports engineers and sourcing specialists seeking dependable semiconductor components.

JANSE2N2907AL-Transistor Key Features

  • Medium power handling capability: Supports collector currents up to 600mA, enabling effective control of loads in switching and amplification circuits.
  • Voltage tolerance: Collector-Emitter voltage rating of 60V provides durability in moderate voltage environments, ensuring device protection and system reliability.
  • Complementary transistor pairing: Designed as a PNP counterpart to standard NPN transistors, facilitating balanced push-pull amplifier designs and simplifying circuit topology.
  • Stable gain characteristics: Provides consistent current gain (hFE) across operating ranges, improving signal integrity and predictable performance in analog and digital applications.

JANSE2N2907AL-Transistor Technical Specifications

Parameter Value Unit
Transistor Type PNP Bipolar Junction
Collector-Emitter Voltage (Vceo) 60 V
Collector Current (Ic) 600 mA
Power Dissipation (Pc) 625 mW
DC Current Gain (hFE) 100 – 300
Transition Frequency (ft) 100 MHz
Collector-Base Voltage (Vcbo) 60 V
Emitter-Base Voltage (Vebo) 5 V
Package Type TO-18 Metal Can

JANSE2N2907AL-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage tolerance, current capacity, and gain stability compared to typical small-signal PNP devices. Its moderate power rating and frequency response make it preferable for applications requiring reliable switching and amplification without the complexity or expense of higher-power transistors. The metal can package enhances thermal dissipation and mechanical durability, improving long-term reliability over plastic encapsulated alternatives.

Typical Applications

  • Signal amplification in audio and instrumentation circuits, where stable gain and low noise are critical for accurate signal processing.
  • Switching elements in low to medium power relay drivers and control circuits, providing efficient load handling.
  • Complementary transistor pairs in push-pull amplifier stages for power-efficient output drive.
  • General purpose switching in industrial automation systems requiring robust and predictable transistor performance.

JANSE2N2907AL-Transistor Brand Info

The JANSE2N2907AL-Transistor is a well-established semiconductor product supplied by IC Manufacturer, known for delivering reliable and consistent discrete components. Designed to meet industry standards, it is favored in industrial, automotive, and consumer electronics segments for its proven performance and quality. The brand emphasizes rigorous testing and quality assurance to ensure each transistor meets demanding electrical and mechanical specifications, making it a trusted choice for engineers and sourcing professionals globally.

FAQ

What is the maximum collector current rating of this transistor?

The device supports a maximum collector current of 600mA, making it suitable for medium power applications such as relay driving and signal amplification tasks.

Can this transistor be used in high-frequency circuits?

Yes, with a transition frequency (ft) of approximately 100 MHz, it can operate effectively in moderate high-frequency applications, including amplifier and switching circuits within this frequency range.

What package does this transistor come in, and why is it important?

This transistor is housed in a TO-18 metal can package, which provides enhanced thermal dissipation and mechanical robustness compared to plastic packages, improving reliability in demanding environments.

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Is this transistor compatible with standard NPN transistors for complementary configurations?

Yes, this PNP transistor is designed to complement common NPN transistors, enabling straightforward implementation in push-pull amplifier and switching circuits that require matched transistor pairs.

What voltage ratings should be considered when designing with this transistor?

The maximum collector-emitter voltage is 60V, collector-base voltage is also 60V, and emitter-base voltage is limited to 5V. These ratings must be respected to prevent device breakdown during operation.

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