JANSD2N5152-Transistor NPN Amplifier Transistor in TO-92 Package ?C High Gain

JANSD2N5152-Transistor Overview

The JANSD2N5152 transistor is a high-voltage, high-current PNP bipolar junction transistor designed for switching and amplification applications. Featuring a collector-emitter voltage rating of up to 140 V and a collector current capacity of 1.5 A, this device supports robust performance in demanding industrial circuits. Its complementary pairing with NPN transistors and suitability for general-purpose use make it ideal for power regulation and signal amplification tasks. This component is manufactured with quality control standards ensuring reliable operation in both commercial and military-grade electronics. For more detailed product sourcing and specifications, visit IC Manufacturer.

JANSD2N5152-Transistor Technical Specifications

JANSD2N5152-Transistor Key Features

• High voltage tolerance: Supports collector-emitter voltages up to 140 V, enabling use in high-voltage switching circuits with improved safety margins.
• Robust current handling: Handles collector currents up to 1.5 A, making it suitable for moderate power amplification and load driving applications.
• Wide gain range: Offers DC current gain between 40 and 250, allowing flexible circuit design with controlled amplification levels.
• Reliable metal TO-39 package: Ensures superior thermal dissipation and mechanical robustness for stable operation under industrial conditions.

Typical Applications

• Power amplification in audio and industrial control circuits requiring medium current and high voltage capability.
• Switching regulators and power management modules in communications and instrumentation equipment.
• Complementary transistor pairs for push-pull amplifier stages in analog signal processing.
• General-purpose switching and amplification in automotive and aerospace electronic systems.

JANSD2N5152-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its balanced combination of high voltage rating and substantial current capacity, surpassing many standard PNP transistors that offer lower voltage tolerance. Its metal TO-39 package enhances thermal management compared to plastic encapsulated alternatives, improving long-term reliability. The extensive gain range also provides design flexibility, making it favorable for engineers seeking consistent performance in demanding industrial and military-grade applications.

JANSD2N5152-Transistor Brand Info

The JANSD2N5152 is a military-grade transistor variant typically produced by manufacturers specializing in high-reliability discrete semiconductors. Designed to meet MIL-STD requirements, it ensures stable performance under harsh conditions such as extreme temperatures and vibrations. This product is commonly sourced from suppliers who provide certified components for aerospace, defense, and industrial markets, reflecting stringent quality assurance and traceability standards.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The maximum collector-emitter voltage (V_CEO) is 140 volts. This rating defines the highest voltage the device can withstand between collector and emitter without breakdown, making it suitable for high-voltage circuit applications.

What type of package does this transistor come in?

This transistor is housed in a TO-39 metal can package, which offers excellent thermal conductivity and mechanical protection, enhancing reliability in industrial and military applications.

What is the typical collector current capacity?

The transistor supports a continuous collector current (I_C) of up to 1.5 amperes