JANSD2N3700-Transistor Overview
The JANSD2N3700-Transistor is a robust NPN silicon transistor designed for medium-power amplification and switching applications. It offers reliable performance with a maximum collector current of 200mA and a collector-emitter voltage rating of 40V, making it suitable for a wide range of industrial and electronic systems. This transistor delivers stable gain characteristics and low leakage currents, ensuring efficiency and longevity in demanding environments. Ideal for engineers and sourcing specialists, it supports precise control in analog circuits, driver stages, and signal processing tasks. For detailed specifications and sourcing options, visit IC Manufacturer.
JANSD2N3700-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN Silicon Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector-Base Voltage (VCBO) | 75 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 200 mA |
| Power Dissipation (Ptot) | 625 mW |
| DC Current Gain (hFE) | 30 to 300 |
| Transition Frequency (fT) | 100 MHz |
| Operating Temperature Range | -55??C to +150??C |
JANSD2N3700-Transistor Key Features
- Wide voltage handling capability: With a collector-emitter voltage rating of 40V, it is well-suited for medium-voltage circuits, providing design flexibility.
- High DC current gain: Offering a gain range from 30 to 300, it ensures effective signal amplification, enhancing circuit sensitivity.
- High transition frequency: The 100 MHz transition frequency supports moderate-speed switching and amplification in RF and analog applications.
- Thermal stability: Operating across a broad temperature range (-55??C to +150??C) ensures reliability in harsh industrial environments.
Typical Applications
- Analog signal amplification in audio and instrumentation systems, where stable gain and moderate power handling are essential for precision.
- Switching applications in control circuits, benefiting from its reliable switching speed and voltage ratings.
- Driver stages for relays and small motors, leveraging its medium current and power dissipation capabilities.
- Low-noise preamplifiers and general-purpose amplification within industrial automation and consumer electronics.
JANSD2N3700-Transistor Advantages vs Typical Alternatives
This transistor provides a balanced combination of voltage rating, gain, and frequency response, offering engineers an efficient solution with enhanced reliability compared to typical low-power transistors. Its extended temperature range and moderate power dissipation give it an edge in industrial applications where stability and long-term performance are critical. The device??s versatility supports both amplification and switching, reducing the need for multiple component types in a design.
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JANSD2N3700-Transistor Brand Info
The JANSD2N3700-Transistor is manufactured under military-grade specifications, ensuring stringent quality and performance standards. This transistor is typically produced by reputable semiconductor manufacturers specializing in high-reliability and industrial-grade components. It adheres to JEDEC and MIL-STD-750 testing protocols, offering assurance for applications requiring durability under stress, such as aerospace, defense, and industrial control systems. The brand emphasizes consistent electrical characteristics and longevity, making it a trusted choice for engineers sourcing dependable transistors.
FAQ
What type of transistor is the JANSD2N3700?
The JANSD2N3700 is an NPN silicon bipolar junction transistor (BJT) designed for medium power amplification and switching tasks. It operates with a collector-emitter voltage of up to 40 volts and supports collector currents up to
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