JANSD2N3637UB-Transistor NPN Bipolar Junction Transistor TO-220 Package by JANSD

JANSD2N3637UB-Transistor Overview

The JANSD2N3637UB is a high-performance NPN bipolar junction transistor (BJT) designed for switching and amplification applications. Offering reliable operation with a maximum collector-emitter voltage of 100V and a collector current rating of 0.8A, this transistor is suitable for medium power circuits. Its complementary gain characteristics and robust packaging make it ideal for use in industrial control, signal processing, and general-purpose amplification. Designed to meet stringent quality standards, this device ensures consistent electrical performance and thermal stability. For sourcing and detailed technical support, visit the IC Manufacturer website.

JANSD2N3637UB-Transistor Technical Specifications

JANSD2N3637UB-Transistor Key Features

• High voltage tolerance: Supports up to 100V collector-emitter voltage, enabling use in medium voltage switching circuits with enhanced safety margins.
• Wide gain range: DC current gain from 40 to 320 offers flexibility for amplification across diverse signal levels and circuit designs.
• Fast switching speed: Transition frequency of 100 MHz allows efficient operation in high-frequency amplifier and switching applications.
• Compact TO-92 package: Facilitates easy PCB integration and effective thermal dissipation in space-constrained industrial environments.

Typical Applications

• General-purpose amplification in audio and signal processing circuits requiring reliable medium power NPN transistor operation.
• Switching elements in relay drivers, motor control circuits, and industrial automation systems due to robust voltage and current ratings.
• Interface components for microcontrollers and logic circuits where moderate power handling and gain characteristics are essential.
• Complementary configurations with PNP counterparts in push-pull amplifiers and output stages for improved linearity and performance.

JANSD2N3637UB-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of high voltage capability and moderate collector current, making it more versatile than many low-voltage or low-current alternatives. Its wide current gain range ensures adaptability across a variety of amplification tasks, while the 100 MHz transition frequency supports faster switching than standard general-purpose transistors. The compact TO-92 package provides practical advantages in dense circuit layouts and thermal management compared to larger, bulkier devices.

JANSD2N3637UB-Transistor Brand Info

The JANSD2N3637UB is manufactured by JAN Semiconductor Devices, known for producing reliable and cost-effective bipolar junction transistors for industrial and commercial electronics applications. The brand emphasizes stringent quality controls and consistency, ensuring components meet demanding electrical and thermal specifications. This transistor is part of their established 2N-series lineup, widely recognized for robust performance in switching and amplification roles across various electronic systems.

FAQ

What is the maximum voltage rating of this transistor?

The maximum collector-emitter voltage (V_CEO) for this device is 100 volts. This allows the transistor to handle medium voltage levels safely in switching and amplification circuits without risk of breakdown.

Can this transistor operate at high frequencies?

Yes, the transistor has a transition frequency (f_T) of 100 MHz, making it suitable for high-frequency switching and amplification applications where fast response times are required.

What type of package does this transistor use?

This component is housed in a TO-92 package, which is a