JANSD2N3637UB/TR Voltage Regulator IC by JANSD | SOT-23 Package | Power Management

JANSD2N3637UB/TR Overview

The JANSD2N3637UB/TR is a high-performance NPN bipolar junction transistor designed for medium power amplification and switching applications. Featuring a robust collector current rating and low saturation voltage, this transistor ensures efficient operation in various industrial circuits. With a TO-220 package suitable for enhanced heat dissipation, it supports reliable performance under demanding conditions. Ideal for power management and signal amplification tasks, this component delivers consistent gain and durability, making it a preferred choice for engineers seeking dependable semiconductor solutions. For more details, visit IC Manufacturer.

JANSD2N3637UB/TR Key Features

• High Collector Current Capacity: Supports up to 30A, enabling robust power handling for demanding industrial applications.
• Low Collector-Emitter Saturation Voltage: Minimizes power loss during switching, enhancing overall circuit efficiency.
• Medium Voltage Rating: Collector-Emitter voltage of 60V provides flexibility across a wide range of electronic designs.
• TO-220 Package: Facilitates effective thermal management for sustained reliability in power electronics.
• High DC Current Gain (hFE): Ensures efficient signal amplification and switching performance.
• Fast Switching Speeds: Supports rapid response times essential for dynamic control circuits.
• Robust Thermal Stability: Maintains consistent operation in fluctuating temperature environments.

JANSD2N3637UB/TR Technical Specifications

JANSD2N3637UB/TR Advantages vs Typical Alternatives

This transistor stands out due to its high collector current rating and low saturation voltage, which reduce conduction losses compared to standard BJTs. Its TO-220 package facilitates superior thermal dissipation, improving reliability under high-power operation. Additionally, the balance of voltage and gain characteristics provides flexibility for diverse industrial uses, making it an efficient and durable alternative to less robust switching transistors.

Typical Applications

• Power Amplification: Efficiently amplifies medium power signals in industrial control and audio amplification circuits, ensuring high linearity and reliability.
• Switching Regulators: Utilized in DC-DC converters and power supply circuits requiring fast switching performance with minimal power loss.
• Motor Control: Suitable for driving small to medium motors where reliable switching and heat management are critical.
• General Purpose Switching: Ideal for relay drivers, solenoid actuators, and other switching devices in automation systems.

JANSD2N3637UB/TR Brand Info

This transistor is part of a product line designed by a leading semiconductor manufacturer known for quality and reliability in industrial-grade components. The JANSD2N3637UB/TR combines robust construction with precise electrical characteristics, reflecting the brand’s commitment to delivering components that meet stringent performance and durability standards required in demanding electronic systems.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current rating is 30 amperes, allowing the device to handle significant power loads suitable for medium power amplification and switching applications.

Which package type does this transistor use, and why is it beneficial?

The transistor uses the TO-220 package, which offers excellent thermal conduction properties. This packaging enhances heat dissipation, permitting sustained operation at higher power levels without thermal failure.

What voltage ratings are specified for this device?

The collector-emitter voltage is rated at 60 volts, while the collector-base voltage is 80 volts. These ratings provide adequate headroom for various industrial and power electronics applications.

How does the DC current gain (hFE) affect performance?

The DC current gain ranges between 20 and 70, which helps ensure efficient amplification and switching performance by allowing adequate current control with minimal input drive.

Is this transistor suitable for high-frequency applications?

With a transition frequency of approximately 2 MHz, this transistor is well-suited for moderate frequency switching and amplification tasks common in industrial control circuits, though it is not optimized for very high-frequency RF applications.