JANSD2N3637L-Transistor NPN Amplifier Transistor in TO-92 Package by JANSD

JANSD2N3637L-Transistor Overview

The JANSD2N3637L is a bipolar junction transistor (BJT) designed for medium power switching and amplification applications. Featuring a robust collector-emitter voltage rating and significant continuous collector current capability, it suits industrial and consumer electronic circuits requiring reliable performance under varying load conditions. This transistor offers stable gain characteristics and efficient thermal handling, making it an ideal choice for switching regulators, motor drivers, and general-purpose amplification. For detailed engineering specifications and sourcing, visit IC Manufacturer.

JANSD2N3637L-Transistor Technical Specifications

JANSD2N3637L-Transistor Key Features

• High voltage tolerance: Supports collector-base voltage up to 100 V, enabling use in demanding power switching circuits.
• Robust continuous collector current: Handles up to 8 A, providing reliable operation in medium power applications.
• Wide operating temperature range: Junction temperature rated up to 200 ??C enhances device reliability under thermal stress.
• Efficient power dissipation: Capable of dissipating 75 W, facilitating effective heat management in industrial environments.
• Moderate gain bandwidth: 8 MHz bandwidth allows for stable switching and amplification at moderate frequencies.

Typical Applications

• Power switching in industrial automation systems requiring reliable current handling and voltage tolerance.
• Audio amplifier stages where medium power gain and thermal stability are essential.
• Motor control circuits benefiting from high collector current and voltage ratings for robust operation.
• Switching regulators and power supply designs utilizing efficient power dissipation characteristics.

JANSD2N3637L-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of high voltage and current handling capabilities with efficient thermal performance, distinguishing it from typical low-power BJTs. Its ability to operate safely at elevated temperatures and dissipate substantial power makes it a dependable choice in harsh industrial environments. Compared to alternatives with lower gain or power ratings, it improves system reliability and reduces the need for extensive thermal management.

JANSD2N3637L-Transistor Brand Info

The JANSD2N3637L transistor is a standard industrial transistor widely supplied by reputable semiconductor manufacturers specializing in discrete power devices. It is often sourced from established brands known for their quality and compliance with industry standards, ensuring consistent electrical characteristics and durability. This device is commonly utilized where proven performance and availability are critical, supported by comprehensive datasheets and application notes from its manufacturers.

FAQ

What is the maximum collector-emitter voltage rating of the JANSD2N3637L transistor?

The maximum collector-emitter voltage (V_CEO) rating is 60 V. This parameter defines the highest voltage the transistor can withstand between the collector and emitter terminals without breakdown, ensuring safe operation within this limit.

How much continuous collector current can this