JANSD2N3636L-Transistor NPN Power Amplifier in TO-126 Package ?C High Performance

JANSD2N3636L-Transistor Overview

The JANSD2N3636L is a high-performance NPN bipolar junction transistor designed for robust switching and amplification in industrial electronic circuits. Featuring a collector-emitter voltage rating of 100V and a collector current capacity of up to 8A, this transistor is well-suited for medium to high power applications. It offers reliable gain characteristics with a DC current gain (hFE) ranging between 40 and 320, enabling efficient signal amplification. Its TO-220 package enhances thermal management and ease of mounting, making it ideal for power regulation, motor control, and audio amplification systems. Available through IC Manufacturer, this transistor combines power handling and durability in a compact form factor.

JANSD2N3636L-Transistor Technical Specifications

JANSD2N3636L-Transistor Key Features

• High Collector Current Capacity: Supports up to 8 A, enabling effective switching in demanding power circuits.
• Wide Voltage Rating: Collector-emitter voltage of 100 V provides flexibility for various industrial applications requiring medium voltage handling.
• Robust DC Gain Range: Gain between 40 and 320 ensures dependable amplification performance across different operating points.
• Thermally Efficient TO-220 Package: Facilitates heat dissipation and reliable mechanical mounting for improved device longevity.
• High Power Dissipation: Rated for 100 W, allowing for sustained operation under high load conditions.

Typical Applications

• Power switching circuits in industrial automation, enabling efficient control of motors, relays, and solenoids with high current requirements.
• Audio amplifier output stages, where linear gain and power handling are critical for sound fidelity and device reliability.
• Voltage regulation and power supply circuits that demand stable and robust transistor operation under varying load conditions.
• General purpose amplification in electronic instrumentation and control systems requiring medium power NPN transistors.

JANSD2N3636L-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of current and voltage ratings compared to many standard NPN BJTs, making it highly suitable for industrial power applications. Its broad DC current gain range ensures adaptability to various signal levels, while the TO-220 package provides enhanced thermal management and reliability. These features collectively improve efficiency and reduce failure risks in demanding environments, positioning it as a preferred choice over lower power or less robust transistor alternatives.

JANSD2N3636L-Transistor Brand Info

The JANSD2N3636L transistor is a variant of the widely recognized 2N3636 transistor series, produced by semiconductor manufacturers specializing in power discrete devices. It is commonly sourced from suppliers offering JAN (Joint Army-Navy) specification or industrial-grade transistors designed to meet stringent reliability and performance standards. This product is often used in applications where military or industrial-grade robustness is required, reflecting its trusted quality and consistent performance in power switching and amplification roles.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for this device is 8 amperes, allowing it to handle significant current loads in power switching and amplifier circuits without damage.

Which package type does this transistor use, and why is it important?

This transistor is housed in a TO-220 package, which is critical for effective heat dissipation and ease of mounting on heatsinks,