JANSD2N3634UB-Transistor Overview
The JANSD2N3634UB is a robust NPN bipolar junction transistor designed for medium to high power switching and amplification applications. Featuring a collector-emitter voltage rating of 100V and a collector current of up to 5A, this transistor delivers reliable performance under demanding electrical conditions. Its low saturation voltage and high gain make it suitable for efficient power management and signal amplification in industrial circuits. Engineered to meet stringent quality standards, the device ensures dependable operation in both analog and digital systems. For comprehensive sourcing and technical details, visit IC Manufacturer.
JANSD2N3634UB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector Current (IC) | 5 A |
| Power Dissipation (PD) | 75 W |
| DC Current Gain (hFE) | 40 to 160 (varies with operating conditions) |
| Transition Frequency (fT) | 1.5 MHz (typical) |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Operating Junction Temperature | -65??C to +200??C |
| Package Type | TO-220 |
JANSD2N3634UB-Transistor Key Features
- High voltage and current handling: Supports up to 100V and 5A collector current, enabling use in power switching circuits with substantial load requirements.
- Low saturation voltage: Minimizes power loss during conduction, improving overall circuit efficiency and thermal management.
- Wide operating temperature range: Ensures stable performance across industrial temperature extremes, enhancing reliability in harsh environments.
- Robust TO-220 package: Facilitates ease of mounting and heat dissipation, supporting high-power applications without compromising device integrity.
Typical Applications
- Power amplifier stages in industrial and consumer electronics where medium to high power drive is necessary, allowing linear amplification with minimal distortion.
- Switching regulator circuits that require efficient handling of high currents and voltages to maintain stable power conversion.
- Relay driver circuits benefiting from the transistor??s capability to switch inductive loads reliably with fast response.
- Motor control applications where precise switching at high current levels is critical for performance and protection.
JANSD2N3634UB-Transistor Advantages vs Typical Alternatives
This transistor offers a compelling combination of high voltage and current ratings with a low saturation voltage, resulting in efficient power handling compared to many standard NPN devices. Its wide temperature tolerance and robust packaging improve reliability under industrial conditions. These features reduce thermal stress and improve switching accuracy, making it a preferred choice over alternatives with lower ratings or less efficient conduction characteristics.
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JANSD2N3634UB-Transistor Brand Info
The JANSD2N3634UB transistor is manufactured under stringent quality controls by a recognized semiconductor producer specializing in discrete power devices. This product line is well-known for balancing performance and cost-effectiveness in power transistors, commonly used within industrial electronics sectors. The brand focuses on delivering components that meet rigorous standards for durability, electrical stability, and thermal management, ensuring compatibility with a broad range of applications from power amplification to switching circuits.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current is rated at 5 amperes, allowing the transistor to handle substantial loads typical in power switching and amplification applications without risk of damage under specified operating conditions.
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Can this transistor operate at high temperatures?
Yes, the device supports an operating junction temperature range from -65??C to +200??C, making it suitable for use in environments where temperature extremes or elevated thermal conditions are expected.
What type of package does this transistor use?
The transistor is housed






