JANSD2N3501UB/TR MOSFET Transistor by JANSD | N-Channel, TO-220 Package

JANSD2N3501UB/TR Overview

The JANSD2N3501UB/TR is a high-voltage bipolar junction transistor (BJT) designed for robust switching and amplification in industrial electronic circuits. Featuring a maximum collector-emitter voltage of 350 V and a collector current rating of 0.8 A, this transistor delivers reliable performance in power management and signal processing applications. Its complementary and switching capabilities make it suitable for use in audio amplifiers, power regulators, and electronic control modules. Available in a standardized TO-92 package, it ensures easy integration into automated production lines and prototyping environments. For detailed technical support and sourcing, visit IC Manufacturer.

JANSD2N3501UB/TR Key Features

• High Voltage Handling: Supports up to 350 V collector-emitter voltage, enabling operation in high-voltage circuits with enhanced safety margins.
• Moderate Collector Current: Rated for 0.8 A collector current, allowing efficient switching and amplification in medium power applications.
• Low Saturation Voltage: Ensures minimal power loss during conduction, improving overall circuit efficiency and thermal management.
• Standard TO-92 Package: Compact and through-hole design facilitates straightforward PCB mounting and compatibility with automated assembly processes.

JANSD2N3501UB/TR Technical Specifications

JANSD2N3501UB/TR Advantages vs Typical Alternatives

This transistor offers superior high-voltage tolerance and moderate current capability compared to typical low-voltage BJTs, improving circuit robustness and reliability. Its low saturation voltage results in less heat generation, enhancing efficiency over alternatives. The standardized TO-92 package supports easy handling and assembly in both manual and automated environments, providing a practical advantage for production and prototyping alike.

Typical Applications

• Power amplifiers in audio devices requiring moderate power handling and high voltage endurance for clean signal amplification.
• Switching regulators used in power management circuits, benefiting from the transistor??s efficient switching and thermal stability.
• Electronic control modules in industrial automation systems where reliable switching at elevated voltages is critical.
• Signal processing circuits needing stable gain and frequency response up to 40 MHz for accurate analog and digital interfacing.

JANSD2N3501UB/TR Brand Info

The JANSD2N3501UB/TR is manufactured and distributed by a reputable semiconductor producer known for delivering reliable bipolar junction transistors tailored for industrial and commercial electronics. This product line emphasizes quality, consistency, and compliance with industry standards, ensuring dependable performance in demanding environments.

FAQ

What is the maximum collector-emitter voltage rating of this transistor?

The transistor can handle a maximum collector-emitter voltage of 350 V, making it suitable for high-voltage switching and amplification tasks in various electronic circuits.

What package type does the JANSD2N3501UB/TR use?

It comes in a TO-92 package, which is a widely used through-hole format. This package type is favored for easy PCB mounting and compatibility with automated insertion equipment.

What is the typical collector current capacity?

This device supports a maximum collector current of 0.8 A, adequate for moderate power applications such as audio amplifiers and power control circuits.

What is the DC current gain range for this transistor?

The DC current gain (hFE) ranges from 10 to 50, allowing it to amplify signals efficiently across various load conditions.

How does the transistor??s low saturation voltage benefit circuit design?

Lower saturation voltage reduces power loss and heat generation during conduction, improving overall circuit efficiency and contributing to more reliable thermal management in design implementations.