JANSD2N3019-Transistor Overview
The JANSD2N3019 is a high-performance NPN bipolar junction transistor designed for medium power amplification and switching applications. Engineered for reliable operation in industrial environments, it supports collector currents up to 800mA and a collector-emitter voltage rating of 60V. This device offers robust gain characteristics and thermal stability, making it suitable for various signal amplification and switching tasks. The transistor??s rugged package ensures durability, while optimized electrical parameters contribute to efficient circuit integration. For reliable sourcing and detailed datasheets, visit IC Manufacturer.
JANSD2N3019-Transistor Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 800 | mA |
| Gain Bandwidth Product (fT) | 100 | MHz |
| DC Current Gain (hFE) | 40 to 160 | Unitless |
| Power Dissipation (PD) | 625 | mW |
| Junction Temperature (TJ) | 150 | ??C |
JANSD2N3019-Transistor Key Features
- High Collector Current Capability: Supports up to 800mA, enabling robust medium power applications with reliable current handling.
- Wide Voltage Ratings: Collector-emitter voltage up to 60V allows safe operation in a variety of signal amplification and switching circuits.
- Broad DC Current Gain Range: Offers gain from 40 to 160, providing flexibility for different amplification requirements.
- High Gain Bandwidth Product: At 100MHz, it ensures efficient high-frequency response, critical for fast switching and RF applications.
- Thermal Stability: Rated for junction temperatures up to 150??C, ensuring reliability under elevated thermal conditions.
- Compact and Rugged Package: Facilitates easy integration into industrial and commercial electronic assemblies while maintaining durability.
Typical Applications
- Signal amplification in audio and intermediate frequency stages where moderate power gain and linearity are essential.
- Switching elements in relay drivers and low-to-medium power switching circuits within industrial controllers.
- Driver transistors for LED arrays and display backlighting circuits requiring controlled current flow.
- General-purpose amplification and switching in power supply regulation and motor control modules.
JANSD2N3019-Transistor Advantages vs Typical Alternatives
This transistor provides an excellent balance of voltage rating, current capacity, and gain, outperforming many generic NPN transistors in medium power scenarios. Its high gain bandwidth enhances switching speed, while the broad gain range supports diverse amplification needs. Compared to typical alternatives, it offers improved thermal handling and reliability, reducing failure rates in demanding industrial environments. This combination of attributes makes it a preferred choice for engineers seeking durable, efficient, and precise transistor performance.
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JANSD2N3019-Transistor Brand Info
The JANSD2N3019 is a semiconductor device commonly manufactured by reputable suppliers specializing in discrete transistors for industrial electronics. It is often sourced from trusted manufacturers who meet stringent quality certifications, ensuring consistency and reliability. This transistor aligns with industry standards for NPN bipolar junction transistors, reflecting the legacy of the 2N3019 family known for medium power amplification. Engineers can rely on its proven performance and availability through authorized distributors and IC Manufacturer platforms.
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