JANSD2N2907AUBC-Transistor PNP Amplifier Transistor in TO-126 Package by JANSD

  • This transistor efficiently amplifies or switches electronic signals, enabling precise control in circuits.
  • Its gain characteristic supports stable signal amplification, ensuring consistent performance under varying conditions.
  • The compact package reduces board space, facilitating integration into designs with limited physical room.
  • Ideal for use in audio amplification and switching applications, enhancing overall circuit responsiveness and efficiency.
  • Manufactured to meet standard quality criteria, this component offers dependable operation over its service life.
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产品上方询盘

JANSD2N2907AUBC-Transistor Overview

The JANSD2N2907AUBC is a high-performance PNP bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a robust collector current rating and a complementary configuration with the widely used NPN counterparts, this transistor offers reliable operation in harsh industrial environments. Its maximum collector-emitter voltage supports various medium-power applications, while the device??s current gain and frequency response ensure efficient signal amplification. Ideal for engineers and sourcing specialists requiring dependable semiconductor solutions, this transistor combines durability with consistent electrical characteristics. For further technical details and procurement options, visit IC Manufacturer.

JANSD2N2907AUBC-Transistor Key Features

  • High Collector Current Capability: Supports up to 600mA, enabling effective handling of moderate power loads in switching and amplification circuits.
  • Collector-Emitter Voltage Rating: Rated at 60V, providing sufficient voltage tolerance for a wide range of industrial and consumer electronics applications.
  • Stable Gain Characteristics: Offers a DC current gain (hFE) typically between 60 and 300, ensuring reliable amplification with predictable performance.
  • Complementary Pair Availability: Designed as a PNP counterpart to common NPN transistors, facilitating push-pull amplifier designs and signal inversion.

JANSD2N2907AUBC-Transistor Technical Specifications

Parameter Value Unit
Type PNP Bipolar Junction Transistor ?C
Collector-Emitter Voltage (Vceo) 60 V
Collector-Base Voltage (Vcbo) 60 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 600 mA
Power Dissipation (Pd) 800 mW
DC Current Gain (hFE) 60 to 300 ?C
Transition Frequency (fT) 100 MHz
Package Type TO-18 Metal Can ?C

JANSD2N2907AUBC-Transistor Advantages vs Typical Alternatives

This transistor delivers a balanced combination of moderate voltage and current ratings with reliable gain, making it superior for applications requiring efficient switching and amplification. Compared to typical alternatives, it offers enhanced frequency response and thermal stability due to its metal can TO-18 package. Its complementary design improves circuit integration in push-pull and amplifier stages, ensuring better linearity and performance in demanding industrial environments.

Typical Applications

  • Signal amplification in audio and low-frequency analog circuits, where stable gain and moderate power handling are essential for sound quality and signal integrity.
  • Switching devices in control systems, enabling reliable on/off switching of loads up to 600mA with minimal power loss.
  • Complementary push-pull amplifier configurations, utilizing the PNP transistor alongside NPN counterparts for efficient power amplification.
  • Industrial automation and instrumentation circuits, benefiting from robust voltage ratings and dependable thermal characteristics.

JANSD2N2907AUBC-Transistor Brand Info

The JANSD2N2907AUBC transistor is a precision-manufactured semiconductor device offered by IC Manufacturer, known for delivering industrial-grade components tailored for high reliability and performance. This product line emphasizes strict quality controls, ensuring consistent electrical parameters and long-term durability. The metal can TO-18 packaging provides excellent thermal conductivity and mechanical protection, positioning the transistor as a trusted solution for engineers and sourcing specialists in industrial and commercial electronics sectors.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for this device is specified at 600 milliamperes (mA), making it suitable for moderate power amplification and switching tasks in various electronic circuits.

What voltage levels can this transistor safely operate at?

This transistor supports a maximum collector-emitter voltage of 60 volts and a collector-base voltage of 60 volts, allowing it to function reliably in medium-voltage environments common in industrial applications.

How does the TO-18 package benefit the transistor??s performance?

The TO-18 metal can package enhances thermal dissipation and mechanical durability, which improves reliability under thermal stress conditions and protects the semiconductor die from environmental factors.

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产品中间询盘

Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency (fT) of approximately 100 MHz, this device can handle moderately high-frequency signals, appropriate for audio and some RF amplification uses.

Can this transistor be used in complementary amplifier circuits?

Absolutely. As a PNP transistor designed to complement common NPN types, it is ideal for push-pull amplifier configurations that require matched transistor pairs for efficient signal amplification and phase inversion.

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