JANSD2N2907AUB/TR Overview
The JANSD2N2907AUB/TR is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This discrete semiconductor device features a high voltage rating and moderate current capacity, making it suitable for a broad range of industrial and consumer electronics. Its robust construction ensures reliable operation across varying temperature ranges and electrical conditions. Engineers and sourcing specialists will appreciate the device??s compatibility with standard circuit designs and ease of integration. For detailed technical support and procurement, visit the IC Manufacturer.
JANSD2N2907AUB/TR Key Features
- High Collector-Emitter Voltage: Supports up to 60 V, enabling use in medium voltage circuits and improving design flexibility.
- Moderate Collector Current: Handles continuous currents up to 600 mA, adequate for typical amplification and switching tasks.
- Low Saturation Voltage: Reduces power dissipation during switching, enhancing overall circuit efficiency and thermal management.
- Complementary Pair Availability: Compatible with NPN counterparts for push-pull or complementary amplifier configurations.
JANSD2N2907AUB/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP Bipolar Junction Transistor | ?? |
| Collector-Emitter Voltage (Vceo) | 60 | V |
| Collector-Base Voltage (Vcbo) | 60 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 600 | mA |
| DC Current Gain (hFE) | 100 ?C 300 | ?? |
| Power Dissipation (Pc) | 625 | mW |
| Transition Frequency (fT) | 100 | MHz |
| Package Type | TO-92 | ?? |
JANSD2N2907AUB/TR Advantages vs Typical Alternatives
This transistor offers a reliable balance between voltage tolerance and current capacity, outperforming many alternatives in low to medium power switching tasks. Its low saturation voltage minimizes energy loss, improving efficiency compared to generic PNP transistors. The well-documented gain range allows precise control in amplification circuits, enhancing accuracy. Additionally, its standard TO-92 package ensures broad compatibility and ease of replacement in legacy systems.
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Typical Applications
- General-purpose amplification in audio and signal processing circuits, leveraging its stable gain and frequency response for clear signal integrity.
- Low to medium power switching in industrial control systems to manage actuators or relay drivers efficiently.
- Complementary push-pull amplifier stages when paired with an NPN transistor for improved linearity and output power.
- Signal inversion and level shifting in logic or interface circuits requiring moderate voltage and current handling.
JANSD2N2907AUB/TR Brand Info
The JANSD2N2907AUB/TR is manufactured by a leading semiconductor company specializing in discrete transistors and integrated circuits. The brand is recognized for providing reliable, high-performance components that meet stringent quality standards. This transistor is part of their industrial-grade product line, designed to ensure long-term durability and consistent electrical characteristics, supporting a wide range of applications from consumer electronics to industrial automation.
FAQ
What is the maximum voltage rating of this transistor?
The maximum collector-emitter voltage for this transistor is 60 volts. This rating defines the maximum allowable voltage between the collector and emitter terminals without causing breakdown or damage, making it suitable for medium-voltage applications.
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Can this transistor handle high current loads?
This device supports a continuous collector current of up to 600 milliamps, making it appropriate for moderate current switching and amplification tasks. For higher current applications, other transistor types may be more suitable.
What packaging does this transistor use, and is it industry-standard?
The transistor is housed in a TO-92 package, a widely used and industry-standard form factor for discrete semiconductors. This packaging facilitates easy handling and mounting in through-hole PCB designs.
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Is this transistor suitable for high-frequency applications?
With a transition frequency of approximately 100 MHz, this transistor can be used in moderate frequency circuits but is not optimized for very high-frequency RF applications. It is ideal for audio and signal processing frequencies.
How does this transistor perform in terms of power dissipation?
The maximum power dissipation is 625 milliwatts, which defines the maximum power the transistor can safely dissipate as heat under normal operating conditions. Proper heat management is recommended to maintain performance and longevity.
