JANSD2N2222AUA/TR NPN Transistor by JANSD | Switching Amplifier | TO-92 Package

  • This transistor enables efficient switching and amplification, improving circuit performance and control.
  • The device offers a specific voltage rating to ensure stable operation under designated electrical conditions.
  • JANSD2N2222AUA/TR features a compact package, allowing for board-space savings in tight layouts.
  • Ideal for signal amplification in low-power applications, it enhances responsiveness and energy use.
  • Manufactured to meet industry standards, it provides consistent reliability in various operating environments.
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产品上方询盘

JANSD2N2222AUA/TR Overview

The JANSD2N2222AUA/TR is a robust NPN bipolar junction transistor designed for general-purpose switching and amplification in industrial electronics. It features a maximum collector current of 800mA and a collector-emitter voltage rating of 40V, making it suitable for a wide range of medium-power applications. Its high gain and fast switching characteristics allow reliable performance in signal processing, control circuits, and driver stages. The device is supplied in a compact, industry-standard SOT-23 package, facilitating easy integration into high-density PCBs. This transistor aligns with the quality and consistency standards expected from IC Manufacturer.

JANSD2N2222AUA/TR Key Features

  • High current capability: Supports collector currents up to 800mA, enabling efficient driving of loads and moderate power devices.
  • Voltage tolerance: Collector-emitter voltage rating of 40V ensures reliable operation within common industrial voltage ranges.
  • Fast switching speed: The transistor??s switching characteristics optimize circuit response time, improving efficiency in digital logic and pulse circuits.
  • Compact SOT-23 package: Facilitates space-saving PCB layouts while maintaining excellent thermal performance.
  • Low saturation voltage: Enhances energy efficiency by minimizing losses during conduction.
  • Wide operating temperature range: Designed for reliable use in harsh industrial environments.

JANSD2N2222AUA/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 800 mA
Gain Bandwidth Product (fT) 300 MHz
DC Current Gain (hFE) 100 – 300 (typical)
Power Dissipation (PD) 625 mW
Package SOT-23 ?C

JANSD2N2222AUA/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of high current capacity, voltage tolerance, and fast switching speed, outperforming many generic NPN transistors in industrial applications. Its low saturation voltage reduces power loss, while the compact SOT-23 package supports dense PCB designs. These features ensure superior reliability and integration flexibility compared to typical alternatives, making it an ideal choice for engineers seeking efficient, durable switching and amplification components.

Typical Applications

  • Switching circuits and driver stages in industrial control systems, where reliable medium-power handling and fast switching are essential for operational stability.
  • Signal amplification in low-to-medium power analog circuits requiring consistent gain within a compact footprint.
  • General-purpose switching in battery-powered devices and portable instrumentation, benefiting from its low power dissipation.
  • Pulse generation and digital logic interfacing in embedded systems and automation equipment.

JANSD2N2222AUA/TR Brand Info

This transistor is manufactured under stringent quality controls by a leading semiconductor supplier known for consistent performance and reliability in industrial-grade components. The JANSD2N2222AUA/TR is part of a well-established product line that caters to engineers and sourcing specialists requiring dependable bipolar transistors designed for diverse applications. Its availability in a standard SOT-23 package supports widespread adoption in modern PCB assembly processes.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current supported is 800mA, enabling the device to handle moderate power loads in switching and amplification applications without degradation.

Can this transistor operate in high-frequency circuits?

Yes. With a typical gain bandwidth product (fT) of 300MHz, it is suitable for high-frequency applications including fast switching and signal amplification.

What package type does this transistor use, and why is it important?

The transistor comes in a SOT-23 package, which is compact and ideal for space-constrained designs. This allows for efficient PCB layouts and good thermal management in industrial electronics.

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产品中间询盘

What voltage limits should be observed for reliable operation?

The device has a collector-emitter voltage rating of 40V, collector-base voltage of 75V, and emitter-base voltage of 6V. Operating within these limits ensures long-term reliability and prevents breakdown.

Is this transistor suitable for battery-powered applications?

Yes. Its low power dissipation and efficient switching characteristics make it well-suited for battery-operated devices, helping to extend battery life by minimizing energy loss.

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