JANSD2N2221AL-Transistor Overview
The JANSD2N2221AL transistor is a robust NPN bipolar junction transistor (BJT) designed primarily for general-purpose amplification and switching applications. Featuring a maximum collector current of 800mA and a collector-emitter voltage rating of 30V, this device offers reliable performance across diverse industrial environments. Its complementary gain bandwidth product and low saturation voltage make it suitable for medium power and low noise circuits. Engineers and sourcing specialists will find this transistor valuable for efficient circuit designs requiring consistent switching speed and thermal stability. Available through IC Manufacturer, it meets stringent industrial standards ensuring dependable operation.
JANSD2N2221AL-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Maximum Collector-Emitter Voltage (Vceo) | 30 V |
| Maximum Collector Current (Ic) | 800 mA |
| Power Dissipation (Pd) | 625 mW (at 25??C) |
| Current Gain (hFE) | 100 to 300 (depending on operating point) |
| Transition Frequency (fT) | 300 MHz (typical) |
| Collector-Base Voltage (Vcbo) | 75 V |
| Emitter-Base Voltage (Vebo) | 6 V |
| Package Type | TO-18 Metal Can |
JANSD2N2221AL-Transistor Key Features
- High collector current capacity: Supports up to 800 mA, enabling efficient switching in medium-power circuits.
- Low saturation voltage: Minimizes power loss during switching, improving overall circuit efficiency and thermal management.
- Wide frequency response: Transition frequency of 300 MHz ensures suitability for high-speed amplification applications.
- Robust voltage ratings: Collector-base voltage of 75 V provides ample margin for voltage spikes and transient conditions.
Typical Applications
- Switching regulators and power management circuits where reliable medium-power switching is required with low saturation losses.
- Audio amplification circuits benefiting from the transistor’s moderate gain and low noise characteristics.
- Signal amplification in industrial control systems requiring stable operation over a broad frequency range.
- General-purpose switching applications in automotive and consumer electronics environments.
JANSD2N2221AL-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of high collector current and low saturation voltage, distinguishing it from typical alternatives with lower current ratings or higher losses. Its robust voltage handling and frequency characteristics provide engineers with a reliable component for switching and amplification tasks, optimizing power efficiency and thermal performance in industrial electronics designs.
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JANSD2N2221AL-Transistor Brand Info
The JANSD2N2221AL transistor is part of a widely recognized series originally standardized by JEDEC and commonly manufactured by various semiconductor producers specializing in industrial-grade discrete components. The ??JAN?? prefix indicates compliance with military-grade quality and reliability standards, ensuring enhanced durability and performance consistency. This device is typically sourced from established suppliers who uphold rigorous manufacturing controls, making it a trusted choice for critical applications requiring dependable bipolar junction transistors.
FAQ
What is the maximum current this transistor can handle?
The maximum collector current for this device is 800 mA. This rating allows the transistor to be used effectively in medium-power switching and amplification circuits without risk of damage under specified operating conditions.
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What package type does the transistor come in?
This transistor is supplied in a TO-18 metal can package, which provides good thermal dissipation and mechanical protection, making it suitable for rugged industrial environments.
Can this transistor be used for high-frequency applications?
Yes, with a transition frequency (fT) of approximately 300 MHz, the device supports moderate to high-frequency applications such as RF amplification and switching circuits requiring fast response times.
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What voltage ratings are important for circuit design with this transistor?
The transistor is rated for a maximum collector-emitter voltage of 30 V, collector-base voltage of 75 V, and emitter-base voltage of 6 V. These ratings ensure safe operation within typical industrial voltage ranges and transient conditions







