JANS2N918UB-Transistor Overview
The JANS2N918UB transistor is a high-performance NPN bipolar junction transistor designed for high-speed switching and low noise amplification in demanding industrial and military applications. Its robust construction ensures reliability under harsh conditions, making it ideal for precision signal processing and RF amplification tasks. With a well-defined gain bandwidth product and excellent frequency response, this transistor supports efficient circuit operation in communication and control systems. The device is manufactured to meet stringent quality standards, ensuring consistent performance and durability. For trusted semiconductor components, visit IC Manufacturer.
JANS2N918UB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Base Voltage (VCBO) | 25 V |
| Collector-Emitter Voltage (VCEO) | 25 V |
| Emitter-Base Voltage (VEBO) | 6 V |
| Collector Current (IC) | 50 mA |
| Transition Frequency (fT) | 250 MHz (typical) |
| DC Current Gain (hFE) | 40 to 300 |
| Power Dissipation (Ptot) | 360 mW |
| Package Type | TO-18 Hermetically Sealed Metal Can |
JANS2N918UB-Transistor Key Features
- High transition frequency: Enables fast switching and amplification in RF circuits, improving signal clarity and speed.
- Wide DC current gain range: Offers flexibility in circuit design with stable gain performance across varying operating conditions.
- Hermetically sealed TO-18 package: Provides enhanced protection against environmental factors, ensuring long-term reliability in harsh industrial environments.
- Low noise characteristics: Ideal for low-level signal amplification where signal integrity is critical.
Typical Applications
- RF Amplification: Widely used in radio frequency amplification stages due to its high gain and frequency response, enhancing communication system performance.
- Switching Circuits: Suitable for high-speed switching applications in industrial control systems requiring precise timing and low power loss.
- Signal Processing: Employed in low-noise preamplifier stages to maintain signal fidelity in measurement and instrumentation devices.
- Military and Aerospace Electronics: Its rugged hermetic packaging and reliable performance make it suitable for defense-related electronic systems operating under extreme conditions.
JANS2N918UB-Transistor Advantages vs Typical Alternatives
This transistor offers distinct advantages over typical alternatives with its combination of high frequency response, wide gain range, and hermetically sealed packaging. These features contribute to improved sensitivity and accuracy in RF and signal amplification circuits. Furthermore, its robust construction enhances reliability and extends operational life in demanding industrial and military applications, ensuring consistent performance where standard plastic-encapsulated transistors may fail.
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JANS2N918UB-Transistor Brand Info
The JANS2N918UB transistor is a military-grade semiconductor device originally standardized under the Joint Army-Navy (JAN) specification, indicating its qualification for rugged, high-reliability applications. This model is commonly produced by manufacturers specializing in high-quality, hermetically sealed discrete semiconductors. The JAN prefix denotes compliance with stringent military requirements, including environmental resilience and electrical performance. Devices like this are typically sourced from trusted suppliers who focus on defense and aerospace components, ensuring precise manufacturing and thorough testing aligned with industry standards.
FAQ
What type of transistor is the JANS2N918UB?
The JANS2N918UB is an NPN bipolar junction transistor designed for high-speed switching and low noise amplification. It is hermetically sealed in a TO-18 metal can package to ensure durability and reliability in demanding environments.
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What are the maximum voltage ratings for this transistor?
This transistor supports a maximum collector-base voltage and collector-emitter voltage of 25 V each, and an emitter-base voltage of 6 V. These voltage ratings make it







