JANS2N918UB/TR NPN Transistor by JAN | High-Speed Switching | TO-18 Metal Can Package

JANS2N918UB/TR Overview

The JANS2N918UB/TR is a high-performance NPN silicon transistor designed for switching and amplification in industrial and military-grade applications. It features a robust gain bandwidth product and low noise characteristics, making it ideal for high-frequency circuits. This transistor meets stringent military standards, ensuring reliability under harsh conditions. With its complementary power and gain parameters, it is well-suited for precision analog designs and high-speed switching tasks. For sourcing engineers and design specialists seeking dependable semiconductor solutions, IC Manufacturer provides this device with consistent quality and traceability.

JANS2N918UB/TR Key Features

• High transition frequency: Supports fast switching speeds up to 100 MHz, enabling high-frequency amplification and signal processing.
• Low collector-emitter saturation voltage: Reduces power loss during switching, enhancing overall circuit efficiency and thermal management.
• Military-grade reliability: Qualified under JANS standards, ensuring stable performance in demanding temperature and environmental conditions.
• Complementary to PNP devices: Facilitates push-pull amplifier configurations and balanced transistor arrays for optimized circuit design.

JANS2N918UB/TR Technical Specifications

JANS2N918UB/TR Advantages vs Typical Alternatives

This transistor offers superior high-frequency performance with a gain bandwidth product of 100 MHz, exceeding many typical alternatives in switching speed. Its low saturation voltage contributes to higher efficiency and reduced thermal stress, making it more reliable for long-term operation. The military-grade JANS qualification guarantees rigorous testing and durability, which is not always assured in commercial-grade devices. These advantages provide engineers with a dependable, precise solution for demanding industrial and aerospace electronics.

Typical Applications

• High-frequency switching circuits where fast transistor response and low saturation voltage are critical for performance and power efficiency in communication and radar systems.
• Signal amplification in analog and digital circuits requiring stable gain and minimal noise at frequencies up to 100 MHz.
• Military and aerospace electronic systems that demand components with verified reliability under extreme temperature and environmental conditions.
• Push-pull amplifier stages utilizing complementary transistor pairs for balanced and efficient power amplification.

JANS2N918UB/TR Brand Info

This transistor is manufactured under the JANS specification, which is a military standard ensuring high reliability and performance. The JANS2N918UB/TR is produced by a trusted semiconductor supplier specializing in components that meet stringent defense and aerospace requirements. This product embodies quality control, extensive testing, and traceability, making it a preferred choice for engineers designing robust electronic systems for harsh environments.

FAQ

What does the JANS qualification mean for this transistor?

The JANS qualification indicates that the transistor has passed military-grade testing standards for temperature range, mechanical stress, and electrical performance. This ensures exceptional reliability and consistency, suitable for critical aerospace and defense applications where failure is not an option.

What is the typical use case for this transistor?

It is typically used in high-frequency switching and amplification circuits, especially in environments demanding high reliability and thermal stability, such as radar systems, communication devices, and industrial control electronics.

How does the low collector-emitter saturation voltage benefit circuit design?

A lower saturation voltage reduces power dissipation in the transistor when switching, which improves efficiency and reduces heat generation. This results in enhanced circuit performance and potentially smaller heat sinking requirements.

Can this device operate at high temperatures?

Yes, it is rated to operate reliably up to 200??C junction temperature, making it suitable for applications exposed to elevated temperatures or requiring robust thermal performance.

What makes this transistor suitable for high-frequency applications?

The transistor??s gain bandwidth product of 100 MHz supports fast switching speeds and efficient amplification at high frequencies, which is essential for RF and high-speed digital circuits.