JANS2N6678T1-Transistor Overview
The JANS2N6678T1 is a high-performance bipolar junction transistor (BJT) designed for demanding industrial and military applications. It features robust switching capabilities and reliable operation under various electrical stresses, making it suitable for amplification and switching tasks. With a maximum collector current rating and stable gain characteristics, this transistor ensures consistent performance in complex circuits. Its hermetically sealed metal can package provides enhanced durability and long-term reliability. Sourcing specialists and design engineers can depend on this component for precision and ruggedness in critical systems. For further details, visit IC Manufacturer.
JANS2N6678T1-Transistor Key Features
- High Current Handling: Supports collector currents up to 10A, enabling robust power control in demanding applications.
- Voltage Endurance: Collector-emitter voltage rating of 60V ensures stable operation within moderate voltage environments.
- Low Saturation Voltage: Offers efficient switching with reduced power dissipation, improving overall circuit efficiency.
- Hermetic Metal Can Package: Provides superior environmental protection, enhancing reliability under harsh conditions.
- Wide Operating Temperature Range: Designed to function across a broad temperature span, ensuring consistent performance in industrial settings.
- High Gain Bandwidth: Facilitates fast switching speeds and effective signal amplification for high-frequency applications.
- Military-Grade Qualification: Complies with rigorous quality and reliability standards for defense and aerospace sectors.
JANS2N6678T1-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector Current (IC) | 10 | A |
| Power Dissipation (PD) | 40 | W |
| DC Current Gain (hFE) | 40 – 320 | Dimensionless |
| Transition Frequency (fT) | 10 | MHz |
| Operating Temperature Range | -65 to +200 | ??C |
| Base-Emitter Voltage (VBE(on)) | 1.2 | V |
| Package Type | Hermetic Metal Can (TO-39) | — |
JANS2N6678T1-Transistor Advantages vs Typical Alternatives
This transistor stands out due to its high current capacity combined with a rugged hermetic package, which offers enhanced protection compared to standard plastic-encapsulated BJTs. Its broad operating temperature range and military-grade qualification ensure superior reliability in harsh environments. Additionally, its low saturation voltage and fast switching frequency deliver improved power efficiency and signal integrity over typical discrete transistors.
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Typical Applications
- Power Amplification: Ideal for audio and radio frequency amplifiers requiring high current and gain stability in industrial control systems.
- Switching Circuits: Suitable for use in power switching and relay driver circuits where reliable operation under load is critical.
- Military and Aerospace Systems: Designed to meet stringent defense standards, making it reliable for avionics and communication equipment.
- Industrial Automation: Used in motor control and signal processing circuits demanding consistent performance over wide temperature ranges.
JANS2N6678T1-Transistor Brand Info
The JANS2N6678T1 transistor is part of a specialized product line developed for high-reliability applications, particularly in defense and industrial sectors. Manufactured under strict quality controls, this device adheres to military and aerospace standards, ensuring durability and long-term stability. Its construction and testing processes focus on delivering robust performance in challenging operational environments. Customers sourcing this product benefit from proven reliability and support from the trusted brand behind it.
FAQ
What is the maximum collector current supported by this transistor?
The device supports a maximum collector current of 10 amperes, enabling it to handle relatively high power loads in switching and amplification applications.
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Can this transistor operate in high-temperature environments?
Yes, it is designed to operate across a wide temperature range from -65??C up to +200??C, making it suitable for harsh industrial and military environments.
What package type does the transistor use and why is it important?
This transistor comes in a hermetically sealed metal can package (TO-39), which provides excellent environmental protection, preventing moisture and contaminants from affecting device performance.
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How does the transistor??s gain bandwidth affect its application?
With a transition frequency around 10 MHz, the transistor supports fast switching and effective signal amplification, which benefits high-frequency and RF circuit designs.
Is this transistor qualified for military or aerospace use?
Yes, it meets military-grade standards, ensuring high reliability and consistent operation under stringent conditions typical of aerospace and defense applications.
