JANS2N6678-Transistor Overview
The JANS2N6678 is a high-performance NPN bipolar junction transistor designed for military and aerospace applications requiring stringent reliability and durability. Manufactured to meet JAN (Joint Army-Navy) standards, this transistor offers robust operation under extreme environmental conditions and high voltage ratings. Its high gain and breakdown voltage support demanding switching and amplification tasks across industrial and defense circuits. Available through IC Manufacturer, this transistor ensures dependable performance with tight manufacturing tolerances, making it ideal for engineers and sourcing specialists focused on long-life, mission-critical systems.
JANS2N6678-Transistor Key Features
- High Voltage Capability: Supports collector-emitter voltages up to 100V, enabling use in high-voltage switching and amplification circuits.
- Military-Grade Reliability: Built to JAN specifications, ensuring consistent performance in harsh environments and high-stress applications.
- High DC Current Gain (hFE): Offers gain values between 40 and 160, enhancing signal amplification efficiency and reducing the need for additional amplification stages.
- Robust Power Dissipation: Rated for up to 1W power dissipation, supporting moderate power applications without degradation.
JANS2N6678-Transistor Technical Specifications
| Parameter | Value | Unit | Description |
|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | V | Maximum voltage between collector and emitter |
| Collector-Base Voltage (VCBO) | 100 | V | Maximum voltage between collector and base |
| Emitter-Base Voltage (VEBO) | 5 | V | Maximum voltage between emitter and base |
| Collector Current (IC) | 1 | A | Maximum continuous collector current |
| Power Dissipation (PD) | 1 | W | Maximum power dissipation at 25??C |
| DC Current Gain (hFE) | 40 – 160 | ?C | Current gain at IC = 150mA, VCE = 10V |
| Transition Frequency (fT) | 100 | MHz | Frequency at which current gain drops to unity |
| Operating Temperature Range | -65 to +200 | ??C | Junction temperature range for reliable operation |
JANS2N6678-Transistor Advantages vs Typical Alternatives
This transistor excels in high-voltage and high-reliability environments compared to typical commercial-grade alternatives. Its military-standard construction offers superior thermal stability and electrical performance under harsh conditions. The combination of high gain, voltage tolerance, and power dissipation enables precise control and efficient amplification, reducing circuit complexity and enhancing system robustness.
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Typical Applications
- Military and aerospace electronic circuits requiring reliable switching and amplification under extreme temperature and mechanical stress conditions.
- High-voltage driver stages in industrial control systems, benefiting from robust voltage ratings and dependable gain characteristics.
- Signal amplification in instrumentation equipment where low noise and high gain stability are critical.
- Power management circuits in military-grade communication devices demanding consistent performance over extended operating lifetimes.
JANS2N6678-Transistor Brand Info
The JANS2N6678 transistor is manufactured under strict quality and reliability standards aligned with the Joint Army-Navy (JAN) certification process. This ensures that each device meets rigorous performance criteria suitable for defense and aerospace applications. The brand??s focus on durability and electrical consistency makes this transistor a preferred choice for critical systems where failure is not an option. Sourcing from authorized distributors guarantees authenticity and compliance with MIL-STD requirements.
FAQ
What is the maximum collector current rating for this transistor?
The transistor supports a maximum continuous collector current of 1 ampere, allowing it to handle moderate power loads in switching and amplification applications without risk of damage.
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Can this transistor operate reliably at elevated temperatures?
Yes, it is rated for operation across a wide temperature range from -65??C to +200??C, making it suitable for harsh environments typically encountered in military and aerospace systems.
What voltage ratings should be considered when designing circuits with this transistor?
Designers should account for the maximum collector-emitter and collector-base voltages of 100V each, and an emitter-base voltage of 5V to ensure safe and reliable transistor operation within specified limits.
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How does the current gain (hFE) range affect circuit design?
The specified current gain range of 40 to 160 provides flexibility in amplification performance, enabling engineers to optimize biasing and gain stages for efficient signal processing in various applications.
Is this transistor suitable for high-frequency applications?
With a transition frequency of approximately 100 MHz, this transistor can be used in moderate high-frequency circuits, making it versatile for many signal amplification and switching scenarios in industrial and defense electronics.
