JANS2N6676T1-Transistor by JAN | High-Power NPN Transistor | TO-220 Package

JANS2N6676T1-Transistor Overview

The JANS2N6676T1 transistor is a high-performance bipolar junction transistor (BJT) designed for medium power amplification and switching applications. Engineered to provide reliable operation under stringent military and industrial standards, this transistor offers robust electrical characteristics, including a high collector current and voltage rating. Its hermetically sealed metal can package ensures enhanced thermal stability and long-term reliability in harsh environments. Ideal for precision circuits requiring stable gain and low noise, this transistor supports demanding applications in aerospace, defense, and industrial electronics. For detailed technical support and sourcing, visit IC Manufacturer.

JANS2N6676T1-Transistor Key Features

• High voltage tolerance: Capable of withstanding collector-emitter voltages up to 100V, ensuring dependable operation in high-voltage circuits.
• Robust collector current: Supports continuous collector currents up to 10A, enabling efficient power handling and amplification.
• Hermetically sealed metal can package: Provides enhanced protection against environmental contaminants and improves thermal dissipation for long-term reliability.
• Low noise figure: Suitable for signal amplification in sensitive analog circuits where noise minimization is critical.

JANS2N6676T1-Transistor Technical Specifications

JANS2N6676T1-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling compared to many standard BJTs, making it ideal for high-power and high-reliability applications. Its hermetic metal can packaging enhances durability and thermal performance, reducing failure rates in harsh environments. Additionally, the wide current gain range provides flexibility for precise amplification tasks, outperforming typical plastic-encapsulated transistors in industrial and military settings.

Typical Applications

• Power amplification stages in radar and communication transmitters, where stable high voltage and current handling is critical for signal integrity.
• Switching elements in industrial motor control circuits requiring robust power switching capability.
• High-reliability aerospace electronics demanding long-term stable performance under temperature and vibration stress.
• Analog signal amplification in instrumentation systems, benefitting from the device??s low noise and high gain characteristics.

JANS2N6676T1-Transistor Brand Info

The JANS2N6676T1 transistor is manufactured under stringent quality controls adhering to military standards, ensuring exceptional reliability and performance. This product is part of a trusted line of bipolar junction transistors designed for demanding industrial and defense applications. Its consistent quality and rugged construction make it a preferred choice for engineers requiring dependable components in critical electronic systems.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current for this transistor is specified as 10 amperes, allowing it to handle significant power loads in amplification and switching applications without degradation.

What type of packaging does this transistor use and why is it important?

This transistor uses a hermetically sealed TO-3 metal can package, which is essential for protecting the device from moisture, dust, and mechanical stress. Such packaging improves thermal dissipation and ensures reliable operation in harsh environments.

Can this transistor be used in high-frequency applications?

While the transition frequency is rated around 3 MHz, the transistor is best suited for medium-frequency power amplification rather than ultra-high-frequency applications. Its design emphasizes power handling and reliability over extreme high-frequency performance.

What voltage limits should be observed to ensure safe operation?

The collector-emitter voltage should not exceed 100 volts, and the collector-base voltage limit is 120 volts. Staying within these parameters prevents breakdown and ensures stable device operation.

Where is this transistor typically applied in industrial electronics?

This transistor is commonly used in power amplification circuits, motor control switches, and aerospace electronics where durability, thermal stability, and consistent gain are critical for system reliability.