JANS2N5795-Dual-Transistor High-Speed Switching Transistor in TO-39 Metal Can Package

JANS2N5795-Dual-Transistor Overview

The JANS2N5795 is a high-performance dual transistor designed for precision switching and amplification in demanding electronic circuits. Engineered to meet stringent military and industrial standards, it offers reliable operation over a wide temperature range and enhanced electrical characteristics. This device is ideal for applications requiring matched transistor pairs with consistent gain and low noise figures. Its robust construction and compliance with JANS quality requirements ensure long-term stability and performance. Sourcing engineers and design professionals can rely on this dual transistor for integration into analog signal processing, driver stages, and control systems. For more technical resources and supply options, visit IC Manufacturer.

JANS2N5795-Dual-Transistor Technical Specifications

Parameter	Specification
Transistor Configuration	Dual NPN
Collector-Emitter Voltage (VCEO)	80 V
Collector-Base Voltage (VCBO)	100 V
Emitter-Base Voltage (VEBO)	5 V
Collector Current (IC)	500 mA
DC Current Gain (hFE) at IC=150mA	40 to 160
Transition Frequency (fT)	80 MHz (typical)
Power Dissipation (PD)	1.0 W per transistor
Operating Temperature Range	-55??C to +125??C
Package Type	TO-18 Metal Can

JANS2N5795-Dual-Transistor Key Features

• Matched dual transistor configuration: Ensures consistent gain and performance across both transistors, critical for differential amplifier circuits and signal integrity.
• High voltage ratings: Supports up to 100 V collector-base voltage, enabling use in medium-power switching and amplification applications.
• Wide operating temperature range: Reliable operation from -55??C to +125??C suits harsh environments and military-grade specifications.
• Low noise and high transition frequency: Provides improved signal fidelity and fast switching for high-frequency analog designs.
• TO-18 hermetically sealed package: Enhances device longevity and resistance to environmental stress, improving overall system reliability.
• Robust power dissipation capability: Supports up to 1 W per transistor, allowing efficient thermal management in compact circuits.
• Strict JANS quality standards: Guarantees rigorous screening and screening procedures, ensuring dependable performance for critical applications.

Typical Applications

• Precision differential amplifiers and matched transistor pairs in analog signal processing circuits, where gain matching and low noise are essential for accurate measurements.
• Switching circuits in military and aerospace systems requiring reliable operation under extreme temperatures and electrical stresses.
• Driver stages for medium-power transistors used in control and interface electronics, benefiting from robust voltage and current handling.
• High-frequency small-signal amplification in communication and instrumentation equipment, leveraging the device??s transition frequency and low noise characteristics.

JANS2N5795-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor offers superior reliability and matched performance compared to typical discrete transistor pairs. Its high voltage and current ratings, combined with a wide operating temperature range and hermetic packaging, deliver enhanced durability in demanding environments. The consistent gain and low noise performance improve circuit accuracy, reducing calibration needs. These benefits make it a preferred choice over standard transistor alternatives in precision analog and military applications.

JANS2N5795-Dual-Transistor Brand Info

The JANS prefix designates this transistor as a military-grade variant manufactured under stringent quality and reliability standards. Typically sourced from established semiconductor manufacturers