JANS2N5794U-Dual-Transistor NPN Power Transistor in TO-3 Package by ON Semiconductor

  • This dual transistor provides efficient switching and amplification, enhancing circuit performance and control.
  • Its high voltage rating ensures reliable operation under demanding electrical conditions, preventing failure.
  • The compact TO-18 metal can package offers space-saving benefits and improved thermal dissipation on circuits.
  • Ideal for signal amplification in audio devices, it helps maintain clear sound quality and consistent output levels.
  • Manufactured to meet strict quality standards, it delivers consistent performance and long-term reliability in applications.
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JANS2N5794U-Dual-Transistor Overview

The JANS2N5794U is a military-grade dual transistor designed for high-reliability applications requiring robust performance under harsh conditions. Featuring complementary NPN transistor pairs encapsulated in a hermetically sealed metal can, this device ensures long-term stability and consistent electrical characteristics. Its dual configuration supports compact circuit designs, minimizing board space while providing reliable amplification and switching functions. Ideal for aerospace, defense, and industrial electronics, the JANS2N5794U delivers consistent gain, low noise, and enhanced thermal stability. For detailed sourcing and specifications, visit IC Manufacturer.

JANS2N5794U-Dual-Transistor Technical Specifications

Parameter Value Unit
Transistor Type Dual NPN ?C
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.8 A
Power Dissipation (PD) 1.0 W
Transition Frequency (fT) 100 MHz
DC Current Gain (hFE) 40?C160 ?C
Package Type TO-39 Metal Can ?C
Operating Temperature Range -55 to +125 ??C

JANS2N5794U-Dual-Transistor Key Features

  • Dual NPN transistors in one package enable space-saving circuit designs, reducing PCB footprint and simplifying layout.
  • Wide voltage ratings support robust operation in high-voltage applications, enhancing device versatility.
  • Hermetically sealed TO-39 metal can ensures reliable operation in extreme environmental conditions, improving longevity and performance stability.
  • High transition frequency (100 MHz) allows for efficient switching and amplification in RF and high-speed circuits.
  • Military-grade testing and screening assure consistent electrical parameters, suitable for defense and aerospace applications.

Typical Applications

  • High-reliability amplifier stages in aerospace communication systems where stable gain and noise performance are critical.
  • Switching circuits in industrial equipment requiring rugged transistor solutions capable of withstanding temperature extremes.
  • Signal processing in defense electronics benefiting from dual transistor integration for compact and efficient design.
  • General-purpose amplification and switching in precision instrumentation where reliability under stress is mandatory.

JANS2N5794U-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor offers clear advantages over standard single-transistor solutions through its integrated design, reducing component count and PCB space. Its military-grade screening ensures superior reliability and consistent performance under thermal and electrical stress. With higher voltage tolerances and a robust metal can package, it outperforms many commercial alternatives in harsh environments. These benefits translate to improved system accuracy, durability, and simplified sourcing for critical applications.

JANS2N5794U-Dual-Transistor Brand Info

The JANS2N5794U is primarily associated with legacy military and aerospace component manufacturers specializing in high-reliability discrete semiconductors. Commonly produced under stringent military standards, it is recognized for rigorous quality assurance and extensive environmental testing. Such components have been historically sourced from brands like ON Semiconductor,

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