JANS2N5416S-Transistor NPN Power Transistor in TO-66 Metal Can Package ?C Motorola

JANS2N5416S-Transistor Overview

The JANS2N5416S is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications in industrial electronics. Built to meet military standards, this transistor offers robust operation with a maximum collector-emitter voltage of 100V and a collector current rating up to 6A, ensuring reliable performance under demanding conditions. Its high gain and power handling capability make it ideal for rugged environments and precision circuit designs. Engineers and sourcing specialists can rely on this device for enhanced durability and consistent electrical characteristics. For detailed sourcing and technical support, visit IC Manufacturer.

JANS2N5416S-Transistor Technical Specifications

JANS2N5416S-Transistor Key Features

• High Collector Current Capacity: Supports continuous collector currents up to 6A, enabling use in high-load switching and amplification circuits.
• Wide Voltage Tolerance: Rated for 100V collector-emitter voltage, providing robustness in high-voltage industrial applications.
• Military-Grade Reliability: Manufactured to JAN (Joint Army-Navy) standards ensuring consistent performance in harsh environments.
• High Power Dissipation: Can dissipate up to 75W, allowing effective thermal management in power electronics.

Typical Applications

• Power amplification stages in industrial control systems requiring stable operation under high current and voltage.
• Switching elements in automotive and aerospace electronics where durability and reliability are critical.
• Voltage regulation and power supply circuits demanding high gain and thermal stability.
• General-purpose industrial transistor applications including motor control and signal processing.

JANS2N5416S-Transistor Advantages vs Typical Alternatives

This transistor excels over typical alternatives by combining high voltage and current ratings with military-grade reliability, making it suitable for demanding environments. Its robust power dissipation capacity reduces thermal stress, while the consistent gain characteristics improve circuit predictability. These factors result in improved sensitivity and operational accuracy, critical for industrial and defense applications requiring long-term stability and performance.

JANS2N5416S-Transistor Brand Info

The JANS2N5416S is produced under the Joint Army-Navy (JAN) certification, indicating compliance with stringent military standards for quality and performance. This standard ensures the transistor meets rigorous testing for temperature range, mechanical shock, and electrical reliability. Originally released by manufacturers specializing in military-grade components, the device is now available through trusted semiconductor suppliers catering to defense, aerospace, and industrial customers requiring dependable transistor solutions.

FAQ

What are the key electrical limits of this transistor?

The transistor supports a maximum collector-emitter voltage of 100V and can handle continuous collector currents up to 6A. It also has an emitter-base voltage limit of 5V and power dissipation up to 75W, making it suitable for high-power applications.

How does the transistor??s military-grade certification benefit industrial use?

Military-grade certification guarantees enhanced reliability under extreme temperatures, mechanical vibration, and electrical stress. This makes the transistor ideal for industrial applications