JANS2N5415S-Transistor Overview
The JANS2N5415S is a high-performance PNP bipolar junction transistor designed for robust switching and amplification tasks in industrial electronics. Engineered to deliver reliable operation under demanding conditions, this transistor supports moderate voltage and current levels with stable gain characteristics. Its rugged construction ensures durability and long-term reliability, making it suitable for aerospace, military, and industrial control applications. The device is ideal for engineers and sourcing specialists seeking a dependable transistor that balances performance and ruggedness. For more detailed product information and purchasing options, visit IC Manufacturer.
JANS2N5415S-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | -100 V |
| Collector-Base Voltage (VCBO) | -100 V |
| Emitter-Base Voltage (VEBO) | -5 V |
| Collector Current (IC) | -3 A (continuous) |
| Power Dissipation (Ptot) | 30 W |
| DC Current Gain (hFE) | 15 to 75 (at IC = -1A) |
| Transition Frequency (fT) | ?? 3 MHz |
| Operating Junction Temperature (TJ) | -65??C to +200??C |
JANS2N5415S-Transistor Key Features
- High Voltage Blocking Capability: With a collector-emitter voltage rating up to -100 V, this transistor can handle substantial voltage stresses, ensuring stable operation in high-voltage environments.
- Robust Collector Current Handling: Supports continuous collector currents up to -3 A, allowing it to drive moderate power loads efficiently in switching and amplification circuits.
- Wide Operating Temperature Range: Rated for junction temperatures from -65??C to +200??C, the device offers excellent thermal reliability for harsh or aerospace-grade applications.
- Stable Current Gain: Provides a DC current gain between 15 and 75, enabling consistent amplification performance across various operating conditions.
Typical Applications
- Power switching circuits requiring reliable PNP transistors capable of handling moderate power levels with strong voltage tolerance.
- Amplifier stages in industrial control systems where temperature stability and gain consistency are critical.
- Military and aerospace electronic modules demanding rugged components with extended temperature capabilities and proven reliability.
- General-purpose discrete transistor use in signal processing and driver circuits within harsh environmental conditions.
JANS2N5415S-Transistor Advantages vs Typical Alternatives
This transistor stands out against typical alternatives by combining high voltage blocking with robust current handling and an extended operating temperature range. Its reliable gain stability and rugged construction ensure consistent performance in demanding industrial and aerospace applications. Compared to standard transistors, it offers enhanced thermal endurance and power dissipation, making it a preferred choice for engineers requiring durability without sacrificing electrical performance.
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JANS2N5415S-Transistor Brand Info
The JANS2N5415S is a military-grade transistor following the JAN (Joint Army-Navy) specification, originally standardized for high-reliability applications in defense and aerospace sectors. This designation reflects stringent quality controls and environmental testing to meet harsh operating conditions. The transistor is commonly produced under license by multiple semiconductor manufacturers specializing in rugged discrete components. Its JAN marking indicates a focus on reliability, traceability, and performance consistency, making it a trusted choice for mission-critical electronic systems.
FAQ
What is the maximum voltage rating for the JANS2N5415S transistor?
The maximum collector-emitter voltage rating is -100 volts, allowing the transistor to operate safely in circuits with moderate to high voltage levels without breakdown.
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Can this transistor handle high current applications?
Yes, it supports continuous collector currents up to -3 amperes, making it suitable for many power switching and amplification applications requiring moderate current capacity.







