JANS2N5154U3/TR JAN Brand NPN Transistor, High Voltage Amplifier, TO-220 Package

  • Serves as a high-performance transistor for reliable switching and amplification in electronic circuits.
  • Features low noise characteristics, enhancing signal clarity in sensitive communication applications.
  • The compact package design enables efficient board-space utilization in densely populated assemblies.
  • Ideal for use in RF amplification tasks where stable gain contributes to consistent device operation.
  • Manufactured under stringent quality controls to ensure long-term operational stability and durability.
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JANS2N5154U3/TR Overview

The JANS2N5154U3/TR is a high-performance bipolar junction transistor (BJT) designed for robust switching and amplification in industrial electronics. This NPN transistor offers reliable operation in demanding environments, featuring a ruggedized, hermetically sealed package that ensures long-term stability and resistance to environmental stress. Its controlled gain and voltage ratings make it suitable for precision analog circuits and high-frequency applications. Engineered to meet military-grade standards, this device is an excellent choice for engineers seeking dependable semiconductor components. For further details, visit IC Manufacturer.

JANS2N5154U3/TR Key Features

  • Hermetically sealed TO-18 metal can package: Provides enhanced environmental protection, ensuring reliable performance under harsh conditions.
  • NPN transistor with high voltage rating: Supports collector-emitter voltages up to 100 V, suitable for robust switching applications.
  • Stable DC current gain (hFE) range: Ensures predictable amplification characteristics for analog circuit designs.
  • Low noise and high frequency operation: Ideal for RF and low-level signal amplification with minimal signal distortion.

JANS2N5154U3/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vceo) 100 V
Collector-Base Voltage (Vcbo) 100 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 0.8 A
DC Current Gain (hFE) 40 to 100 (typical)
Transition Frequency (fT) 100 MHz
Power Dissipation (Pd) 0.8 W
Operating Temperature Range -65 to +200 ??C

JANS2N5154U3/TR Advantages vs Typical Alternatives

This device offers superior environmental resilience thanks to its hermetically sealed metal can package, making it more reliable in harsh conditions compared to plastic-encapsulated transistors. Its high voltage and current ratings combined with a consistent gain range provide enhanced performance in high-frequency and precision analog circuits. These advantages result in improved circuit stability and longevity, reducing the risk of failure in critical industrial applications.

Typical Applications

  • High-frequency amplification circuits requiring low noise and stable gain for industrial communication systems and instrumentation.
  • Robust switching components in power control and driver circuits where high voltage and current handling are essential.
  • Military and aerospace electronics demanding hermetic sealing and extended temperature range for reliable operation.
  • Precision analog signal processing where transistor linearity and frequency response impact overall system performance.

JANS2N5154U3/TR Brand Info

The JANS2N5154U3/TR transistor is part of a series of military-grade semiconductor components produced under rigorous quality standards. This product is recognized for its reliability and consistent electrical characteristics, aligning with stringent industry requirements. The brand emphasizes robust packaging and extensive testing to ensure performance in critical applications, making it a trusted choice among engineers designing defense, aerospace, and industrial electronic systems.

FAQ

What type of transistor is the JANS2N5154U3/TR?

The device is an NPN bipolar junction transistor designed primarily for switching and amplification tasks. It features a hermetically sealed metal can package, ensuring durability and stable performance in demanding environments.

What are the key electrical limits I should consider?

Key parameters include a maximum collector-emitter voltage of 100 V, collector current up to 0.8 A, and power dissipation rated at 0.8 W. These limits define the safe operating range for reliable use in circuits.

Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency (fT) of approximately 100 MHz, this transistor supports high-frequency operation, making it suitable for RF amplification and other fast-switching applications.

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产品中间询盘

What environmental conditions can the transistor withstand?

The hermetically sealed TO-18 package and operating temperature range from -65??C to +200??C provide excellent protection against moisture, contaminants, and extreme temperatures, ensuring stable performance in harsh industrial or military environments.

How does this transistor compare to plastic-encapsulated alternatives?

The hermetic sealing improves long-term reliability and prevents contamination that can degrade transistor performance over time. This makes it more reliable and consistent under temperature and humidity stress, which is critical for mission-critical and industrial electronics.

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