JANS2N5153-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package

  • This transistor amplifies or switches electronic signals, enabling efficient control in circuits.
  • Its voltage and current ratings support stable operation under typical load conditions.
  • The compact package design ensures board space is conserved in dense electronic assemblies.
  • Ideal for signal processing tasks in communication devices, enhancing performance consistency.
  • Manufactured to meet reliability standards, ensuring long-term operational stability in various environments.
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JANS2N5153-Transistor Overview

The JANS2N5153 is a high-performance NPN bipolar junction transistor designed for switching and amplification in industrial electronics. It features a robust collector-emitter voltage rating of 40V and a collector current capacity up to 600mA, making it suitable for moderate power applications. Engineered to meet stringent military standards, this transistor offers reliable operation with stable gain characteristics, low saturation voltage, and excellent frequency response. Its complementary structure and optimized doping profile ensure efficient switching behavior and thermal stability. Available through IC Manufacturer, it is ideal for engineers seeking dependable semiconductor components in control, signal processing, and amplification circuits.

JANS2N5153-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Base Current (IB) 100 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 40 to 160 (at IC = 10mA)
Transition Frequency (fT) 80 MHz
Package Type TO-18 Metal Can

JANS2N5153-Transistor Key Features

  • High voltage tolerance: With a collector-emitter voltage rating of 40V, the device handles moderate voltage applications reliably, reducing risk of breakdown in industrial circuits.
  • Robust current capacity: Supports collector currents up to 600mA, enabling efficient switching and amplification in control systems and driver stages.
  • Wide gain range (40?C160): Ensures flexibility in signal amplification, allowing circuit designers to tailor performance according to application requirements.
  • High transition frequency (80 MHz): Facilitates fast switching speeds and improved frequency response in analog and digital applications.
  • TO-18 metal can package: Provides enhanced thermal dissipation and mechanical durability, ensuring long-term reliability under harsh conditions.
  • Low power dissipation (625 mW): Enables efficient operation with reduced thermal stress, supporting compact and energy-conscious designs.

Typical Applications

  • Used in analog signal amplification circuits where stable gain and frequency response are critical, such as sensor interfaces and communication modules.
  • Commonly applied in switching circuits for industrial control systems, enabling reliable ON/OFF control of loads and relays.
  • Employed in driver stages for low to medium power loads, including motor control and LED drivers, benefiting from its current handling and voltage ratings.
  • Suitable for use in test equipment and instrumentation requiring precision transistors with consistent electrical characteristics.

JANS2N5153-Transistor Advantages vs Typical Alternatives

Compared to typical general-purpose transistors, this device offers enhanced voltage and current handling combined with a wide gain range, making it more versatile for demanding industrial applications. Its metal can packaging improves thermal performance and mechanical stability, increasing reliability in rugged environments. The high transition frequency ensures quicker switching and better performance in high-speed circuits, providing engineers with a robust option that balances sensitivity and power efficiency over alternative transistor choices.

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