JANS2N5002-Transistor Overview
The JANS2N5002 is a high-performance NPN bipolar junction transistor designed for military and aerospace applications requiring rugged reliability and stable operation under harsh conditions. With a maximum collector-emitter voltage of 160 V and a collector current rating of 1 A, this transistor is optimized for switching and amplification tasks in demanding circuits. Its hermetic TO-18 metal can package ensures excellent thermal conductivity and mechanical durability, making it ideal for environments with extreme temperature and vibration. Sourced from IC Manufacturer, this device supports robust design needs by delivering consistent electrical characteristics and long-term operational stability.
JANS2N5002-Transistor Key Features
- High voltage rating: Supports up to 160 V collector-emitter voltage, enabling use in circuits with elevated power demands.
- Collector current capability: Delivers continuous current up to 1 A, suitable for moderate power switching and amplification.
- Hermetic TO-18 metal can package: Provides superior protection against environmental stressors, enhancing reliability in aerospace and military systems.
- Stable gain characteristics: Ensures predictable transistor performance over a wide temperature range, critical for precision analog applications.
JANS2N5002-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 160 V |
| Collector-Base Voltage (VCBO) | 160 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1 A (continuous) |
| Power Dissipation (Ptot) | 1 W (at 25??C) |
| Gain Bandwidth Product (fT) | 40 MHz (typical) |
| DC Current Gain (hFE) | 40 to 160 (varies by test conditions) |
| Package Type | Hermetic TO-18 metal can |
JANS2N5002-Transistor Advantages vs Typical Alternatives
Compared to standard commercial transistors, this device provides enhanced voltage and current handling capabilities critical for rugged industrial electronics and aerospace systems. Its hermetic packaging ensures superior environmental protection, offering long-term reliability where typical plastic-encapsulated transistors may fail. The stable gain and moderate frequency response allow precise control in analog circuits, making it a dependable choice for mission-critical applications.
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Typical Applications
- Military and aerospace electronic systems requiring high voltage switching and amplification with reliable performance under extreme environmental conditions.
- Precision analog circuits where stable gain over temperature variations is essential for accurate signal processing.
- Power control modules in industrial automation that demand robust transistors capable of handling moderate current loads.
- High-reliability instrumentation equipment where long-term operational stability is a critical design criterion.
JANS2N5002-Transistor Brand Info
The JANS2N5002 transistor is a premium-grade product manufactured under stringent military standards, ensuring compliance with JANS (Joint Army Navy Semiconductor) specifications. This designation guarantees rigorous screening for quality, environmental resistance, and electrical performance. The product is widely trusted by defense contractors and aerospace engineers for applications where failure is not an option. It is supported by comprehensive datasheets and quality certifications that facilitate integration into complex, high-reliability systems.
FAQ
What is the maximum collector-emitter voltage rating of this transistor?
The transistor supports a maximum collector-emitter voltage (VCEO) of 160 volts, allowing it to operate safely in circuits with relatively high voltage requirements without breakdown.
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In what type of package is the transistor housed?
This transistor comes in a hermetic TO-18 metal can package, which provides excellent protection against moisture, dust, and mechanical stress, making it suitable for harsh operating environments.
What is the typical current gain (hFE) range for this device?
The DC current gain (hFE) typically ranges from 40 to 160, depending on test conditions such as collector current and temperature, providing flexibility for various circuit designs.
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Can this transistor be used in high-frequency applications?
With a gain bandwidth product around 40 MHz, this transistor is suitable for moderate-frequency applications but may not be ideal for very high-frequency RF designs requiring GHz-range devices.
What are the recommended operating conditions for power dissipation?
The maximum power dissipation is rated at 1 watt at 25??C ambient temperature. Proper heat sinking and thermal management are necessary to maintain reliable operation within this limit.







