JANS2N4033-Transistor Overview
The JANS2N4033 transistor is a high-performance NPN silicon transistor designed for military and aerospace applications requiring reliable switching and amplification. Constructed to meet JAN standards, it offers robust electrical characteristics with a maximum collector current of 150mA and a collector-emitter voltage rating of 80V. Its complementary construction ensures consistent gain and switching speed, suitable for critical circuits where stability and durability are paramount. This transistor is an ideal choice for engineers seeking a dependable semiconductor component in harsh environments. For detailed technical data and sourcing, visit IC Manufacturer.
JANS2N4033-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 150 mA |
| Power Dissipation (PD) | 800 mW |
| DC Current Gain (hFE) | 40 to 160 (at IC=10mA) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | TO-18 Metal Can |
JANS2N4033-Transistor Key Features
- High voltage capability: With a collector-emitter voltage rating of 80V, it supports circuits that require robust voltage handling.
- Moderate current handling: The 150mA collector current rating allows for efficient switching in low to medium power applications.
- Reliable gain characteristics: A wide DC current gain range ensures consistent amplification performance in varied circuit environments.
- Military-grade construction: The JANS2N4033 meets stringent JAN standards, ensuring durability and reliability under harsh operating conditions.
- Low power dissipation: Power dissipation rating up to 800mW reduces thermal stress, improving long-term device reliability.
- High-frequency response: Transition frequency around 100MHz enables use in high-speed switching and RF amplification circuits.
- TO-18 package: Its metal can package offers excellent thermal conductivity and mechanical stability for rugged applications.
Typical Applications
- Low-noise amplification circuits in aerospace and defense systems, ensuring signal integrity in demanding environments.
- Switching applications in military-grade electronic control units, where reliability and performance under stress are critical.
- High-frequency oscillator driver stages requiring stable gain and good frequency response up to 100MHz.
- Signal processing modules within communication equipment used in harsh or temperature-variable conditions.
JANS2N4033-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and consistent electrical characteristics compared to standard commercial BJTs, thanks to its JAN certification. Its high voltage and moderate current ratings make it suitable for critical aerospace and military applications where robustness and precision are essential. The metal can TO-18 package enhances thermal management and longevity, providing an edge over plastic-encapsulated counterparts in harsh environments.
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JANS2N4033-Transistor Brand Info
The JANS2N4033 is a military-grade transistor type typically produced by manufacturers specializing in rugged semiconductor devices conforming to Joint Army-Navy (JAN) standards. These transistors are often supplied by renowned semiconductor companies that focus on high-reliability components for defense and aerospace sectors. The JAN prefix signifies strict adherence to quality, screening, and performance criteria established by military specifications. This product is recognized for its durability, stable gain performance, and suitability in critical applications requiring extended lifecycle and environmental
