JANS2N3868-Transistor | NPN Power Amplifier Transistor | TO-39 Metal Can Package

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • It features a robust current rating, ensuring stable performance under demanding operating conditions.
  • The compact package design allows for easy integration and conserves valuable board space.
  • Ideal for audio amplification, this component enhances sound signal clarity in communication devices.
  • Manufactured to meet strict quality standards, it offers dependable reliability in critical applications.
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JANS2N3868-Transistor Overview

The JANS2N3868 is a high-performance NPN silicon transistor designed for applications requiring robust power handling and fast switching capabilities. This transistor features a high collector current rating and voltage tolerance, making it suitable for amplification and switching in industrial and military-grade circuits. Its rugged construction ensures reliable operation under demanding conditions, while its low noise figure supports high-fidelity signal processing. The JANS2N3868 is a trusted solution for engineers seeking efficient and durable transistor performance from a reputable IC Manufacturer.

JANS2N3868-Transistor Technical Specifications

Parameter Value Unit
Type NPN Silicon
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 5 A
Power Dissipation (Ptot) 30 W
Transition Frequency (fT) 70 MHz
DC Current Gain (hFE) 40?C160

JANS2N3868-Transistor Key Features

  • High collector current capability: Supports up to 5 A, enabling efficient power amplification in demanding circuits.
  • Robust voltage ratings: Withstands collector-emitter voltages up to 60 V, allowing operation in high-voltage environments.
  • Wide DC gain range: Provides flexibility in circuit design through a gain range of 40 to 160, ensuring consistent amplification.
  • Fast switching frequency: Transition frequency up to 70 MHz enhances performance in high-speed switching and RF applications.

Typical Applications

  • Power amplification in audio and RF circuits, where high collector current and voltage ratings are essential for signal integrity and output power.
  • Switching regulators and power converters requiring fast and reliable switching transistors to maintain efficiency.
  • Industrial control systems utilizing robust transistors for driving loads and interfacing with high-voltage signals.
  • Military and aerospace electronic systems demanding high reliability and consistent transistor performance under harsh conditions.

JANS2N3868-Transistor Advantages vs Typical Alternatives

This transistor offers superior current handling and voltage tolerance compared to many standard NPN types, enhancing circuit robustness. Its broad gain range supports diverse amplification needs, while the high transition frequency allows faster switching speeds. These advantages translate into improved performance, reliability, and efficiency, providing engineers with a dependable component for power and signal applications.

JANS2N3868-Transistor Brand Info

The JANS2N3868 is a military-grade variant of the popular 2N3868 transistor, produced under stringent quality standards to meet defense and aerospace requirements. Often supplied by authorized manufacturers specializing in semiconductor components for industrial and military use, this transistor is known for its ruggedness and reliability. The JANS prefix denotes its compliance with Joint Army-Navy standards, ensuring suitability for critical applications where performance and durability cannot be compromised.

FAQ

What is the maximum collector current rating of this transistor?

The transistor can handle a maximum collector current of 5 amperes, making it suitable for applications requiring significant current flow without compromising device integrity.

Can this transistor operate at high frequencies?

Yes, the device features a transition frequency of approximately 70 MHz, which supports high-speed switching and RF amplification tasks effectively.

What voltage levels can the transistor tolerate between collector and emitter

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