JANS2N3737UB/TR Overview
The JANS2N3737UB/TR is a high-performance NPN bipolar junction transistor designed for industrial and military-grade applications. It offers robust switching and amplification capabilities with enhanced reliability under harsh environmental conditions. Featuring a TO-39 metal can package, this transistor ensures excellent thermal performance and durability. Its electrical characteristics make it suitable for medium-power amplification and switching tasks in demanding electronic circuits. Engineers and sourcing specialists will find this device valuable for designs requiring proven quality and compliance with stringent standards. For more detailed product sourcing and technical assistance, visit IC Manufacturer.
JANS2N3737UB/TR Key Features
- High current gain: Ensures effective amplification, reducing the need for additional stage components.
- Maximum collector-emitter voltage of 60V: Suitable for medium-voltage applications, enhancing circuit flexibility.
- TO-39 hermetic metal can package: Provides superior thermal dissipation and mechanical stability, ideal for rugged environments.
- Low noise characteristics: Improves signal integrity in sensitive analog circuits.
JANS2N3737UB/TR Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 75 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 4 A (max) |
| Power Dissipation (Ptot) | 30 W (max) |
| DC Current Gain (hFE) | 40 to 160 (typical range) |
| Transition Frequency (fT) | 3 MHz (typical) |
| Package Type | TO-39 Metal Can |
| Operating Temperature Range | -65??C to +200??C |
JANS2N3737UB/TR Advantages vs Typical Alternatives
This transistor stands out with its high collector current rating and broad operating temperature range, offering greater reliability in industrial and military applications. Its metal can package provides superior thermal management compared to plastic-encapsulated alternatives, increasing device longevity. The combination of high gain and low noise performance enables efficient signal amplification, reducing overall circuit complexity while maintaining precision and durability.
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Typical Applications
- Medium power amplification in industrial control systems, where high current capacity and thermal stability are essential for reliable operation under varying loads.
- Switching applications within military communication equipment requiring rugged packaging and consistent electrical performance.
- Analog signal processing circuits that benefit from low noise and stable gain characteristics.
- Power regulation and driver stages in automation systems, leveraging the device??s robust current handling and voltage tolerances.
JANS2N3737UB/TR Brand Info
The JANS2N3737UB/TR is produced under the JAN (Joint Army-Navy) specification, representing a high-reliability transistor series designed for military and aerospace use. This product is manufactured to meet stringent quality and performance standards, ensuring consistent behavior in mission-critical applications. The brand is recognized for durability, long-term availability, and compliance with rigorous environmental and electrical testing protocols, making it a trusted component for engineers and sourcing professionals in demanding sectors.
FAQ
What is the maximum collector current rating of the JANS2N3737UB/TR?
The maximum collector current for this transistor is rated at 4 amperes. This allows it to handle moderate power levels effectively in switching and amplification roles without compromising device integrity.
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What packaging does the transistor use and why is it important?
This transistor comes in a TO-39 metal can package, which provides excellent thermal dissipation and mechanical protection. Such packaging is critical in industrial and military environments where temperature extremes and physical stresses are common.
Can this transistor operate at high temperatures?
Yes, it supports an operating temperature range from -65??C up to +200??C, making it suitable for harsh environmental conditions encountered in aerospace and military applications.
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What are the voltage limits for safe operation?
The device can withstand collector-emitter voltages up to 60 V, collector-base voltages up to 75 V, and emitter-base voltages up to 5 V. Staying within these limits ensures reliable performance and prevents breakdown.
What applications benefit most from using this transistor?
Applications requiring medium power amplification, robust switching, and low noise performance under demanding environmental conditions benefit most. These include military communications, industrial automation, and aerospace electronic systems.
