JANS2N3737-Transistor Overview
The JANS2N3737 transistor is a high-power NPN bipolar junction transistor designed for switching and amplification in demanding industrial and military applications. With a robust collector-emitter voltage rating and significant collector current capacity, it delivers reliable performance under high stress conditions. Its construction meets stringent military standards (JANS), ensuring enhanced reliability and durability. This transistor is suitable for power amplification, power switching, and load driving roles in harsh environments where long-term stability and ruggedness are critical. For detailed sourcing and technical support, visit IC Manufacturer.
JANS2N3737-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCE) | 100 | Volts |
| Collector-Base Voltage (VCB) | 100 | Volts |
| Emitter-Base Voltage (VEB) | 5 | Volts |
| Collector Current (IC) | 10 | Amps |
| Power Dissipation (PD) | 115 | Watts |
| Gain Bandwidth Product (fT) | 6 | MHz |
| DC Current Gain (hFE) | 20 to 70 | Unitless |
| Operating Junction Temperature (Tj) | 200 | ??C |
JANS2N3737-Transistor Key Features
- High voltage and current handling: Supports collector-emitter voltages up to 100V and collector currents up to 10A, enabling robust power switching and amplification.
- Military-grade construction (JANS): Ensures reliable performance in harsh thermal and mechanical environments, critical for aerospace and defense systems.
- Wide operating temperature range: Rated for junction temperatures up to 200??C, allowing operation in elevated temperature conditions without degradation.
- Moderate gain bandwidth: With a gain bandwidth product around 6 MHz, suitable for medium-frequency switching and linear amplifier applications.
Typical Applications
- Power amplification stages in industrial and military RF amplifiers, where high power and ruggedness are essential for signal integrity.
- Switching regulators and power converters requiring high current capacity and stable operation under thermal stress.
- Load driving in aerospace and defense electronic modules, benefiting from the transistor??s military qualification and reliability.
- General purpose switching and amplification in harsh environmental conditions such as automotive and industrial control systems.
JANS2N3737-Transistor Advantages vs Typical Alternatives
This transistor offers superior power handling and ruggedness compared to standard commercial transistors, thanks to its military-grade (JANS) qualification. Its ability to operate reliably at high junction temperatures and elevated collector currents makes it advantageous for demanding applications where long-term stability and robustness are required. Compared to typical alternatives, it provides enhanced thermal resilience and current capacity, reducing failure rates in critical systems.
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JANS2N3737-Transistor Brand Info
The JANS2N3737 is a military-standard bipolar power transistor originally produced by manufacturers specializing in defense-grade semiconductor components. The “JANS” prefix indicates compliance with stringent military specifications, ensuring superior reliability, quality control, and environmental resistance. This device is widely recognized in aerospace and defense sectors for its ruggedness and performance under extreme conditions. It is generally sourced through specialized distributors and authorized suppliers that cater to military and industrial electronics markets.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current
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