JANS2N3700UB-Transistor by JAN Semiconductor | NPN Transistor | TO-92 Package

  • This transistor amplifies electrical signals, enabling improved control in electronic circuits.
  • It features a specified maximum voltage rating, ensuring safe operation within designed limits.
  • The compact package reduces board space, facilitating efficient circuit layouts in tight environments.
  • Ideal for switching applications, it enhances performance by providing reliable signal modulation.
  • Manufactured under strict quality controls, it delivers consistent performance and long-term reliability.
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产品上方询盘

JANS2N3700UB-Transistor Overview

The JANS2N3700UB-Transistor is a high-performance NPN bipolar junction transistor designed for robust switching and amplification in industrial and military-grade applications. This transistor offers reliable operation under stringent conditions, featuring superior gain and voltage handling capabilities. Engineered to meet rigorous standards, it ensures stable performance in power amplification, signal processing, and control circuits. Its compatibility with a variety of electronic systems makes it an ideal choice for engineers seeking dependable transistor components with proven endurance. Available through IC Manufacturer, this device delivers consistent quality and operational excellence.

JANS2N3700UB-Transistor Key Features

  • High Voltage Capability: Supports collector-emitter voltages up to 60V, enabling use in demanding power applications.
  • Strong Current Handling: Collector current rating of 200mA ensures effective switching and amplification in medium-power circuits.
  • Enhanced Gain Performance: Current gain (hFE) range from 40 to 300 offers flexibility in amplification precision and signal integrity.
  • Military-Grade Reliability: Designed to comply with JAN (Joint Army-Navy) standards, providing enhanced durability for critical applications.

JANS2N3700UB-Transistor Technical Specifications

Parameter Value
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 60 V
Collector Current (Ic) 200 mA
Power Dissipation (Ptot) 625 mW
Gain Bandwidth Product (fT) 40 MHz (typical)
DC Current Gain (hFE) 40 to 300
Collector-Base Voltage (Vcbo) 75 V
Emitter-Base Voltage (Vebo) 5 V
Operating Temperature Range -55??C to +125??C

JANS2N3700UB-Transistor Advantages vs Typical Alternatives

This transistor delivers superior voltage and current ratings combined with a broad gain range, outperforming many standard NPN transistors. Its military-grade certification ensures higher reliability and environmental resilience, making it ideal for critical industrial and aerospace systems. Compared to typical alternatives, it offers enhanced switching speed and power dissipation, enabling more efficient circuit designs without compromising durability.

Typical Applications

  • Power Amplification: Suitable for medium-power amplifier circuits requiring stable gain and voltage handling in industrial control systems.
  • Switching Devices: Efficiently drives loads in switching applications, including relay control and signal modulation.
  • Signal Processing: Used in analog signal amplification and conditioning circuits where precise current gain is necessary.
  • Military and Aerospace Electronics: Designed to meet rigorous standards for use in rugged and high-reliability environments.

JANS2N3700UB-Transistor Brand Info

The JANS2N3700UB-Transistor is produced under strict quality controls adhering to Joint Army-Navy (JAN) specifications, reflecting a commitment to high reliability and performance in critical applications. This product line is recognized for its stringent testing, traceability, and rugged design tailored for aerospace, defense, and industrial electronics. The brand emphasizes durability and consistent electrical characteristics, ensuring dependable operation in severe environments and mission-critical systems.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current rating is 200mA, allowing it to handle moderate power levels in switching and amplification tasks without compromising device integrity.

Can this transistor operate at high temperatures?

Yes, it supports an operating temperature range from -55??C to +125??C, making it suitable for harsh industrial and military environments where temperature stability is crucial.

What voltage levels can this transistor withstand?

It can tolerate collector-emitter voltages up to 60V, collector-base voltages up to 75V, and emitter-base voltages up to 5V, providing flexibility in various circuit designs.

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产品中间询盘

Is this transistor suitable for high-frequency applications?

The device features a typical gain bandwidth product of 40 MHz, which is adequate for many mid-frequency analog and switching applications but may not be ideal for very high-frequency RF circuits.

What reliability standards does this transistor meet?

This transistor complies with Joint Army-Navy (JAN) military standards, ensuring enhanced ruggedness, traceability, and performance reliability under demanding conditions.

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