JANS2N3637UB/TR NPN Transistor by JAN, High Voltage, TO-66 Metal Can Package

  • Acts as a high-performance transistor, enabling efficient signal amplification and switching in circuits.
  • Features a specified voltage rating that ensures stable operation under typical electrical stresses.
  • Comes in a compact package, allowing for board-space savings and simplified PCB layout.
  • Ideal for audio amplification applications, providing clear sound output with minimal distortion.
  • Manufactured to meet rigorous quality standards, supporting consistent and reliable device performance.
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产品上方询盘

JANS2N3637UB/TR Overview

The JANS2N3637UB/TR is a high-performance NPN silicon transistor designed for use in industrial and military-grade electronic applications. Featuring a robust TO-18 metal can package, it ensures enhanced thermal stability and reliability under demanding operating conditions. This transistor offers a collector-emitter voltage rating suitable for medium-power amplification and switching tasks, making it ideal for precision analog circuits and high-frequency applications. The device’s JAN (Joint Army-Navy) qualification underlines its compliance with strict military standards, providing engineers and sourcing specialists with confidence in long-term durability and consistent performance. Available through IC Manufacturer, the device suits environments requiring rigorous quality and operational stability.

JANS2N3637UB/TR Key Features

  • High voltage handling: Supports a collector-emitter voltage up to 80V, enabling effective operation in medium-power circuits.
  • Reliable metal can TO-18 package: Ensures excellent thermal dissipation and mechanical protection, critical for harsh environments.
  • JAN military-grade qualification: Guarantees performance consistency and ruggedness for defense and aerospace applications.
  • Moderate gain characteristics: Provides stable amplification with a typical hFE range suitable for analog and switching functions.

JANS2N3637UB/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 0.8 A
Power Dissipation (PD) 1.0 W
DC Current Gain (hFE) 40 to 300 ??
Transition Frequency (fT) 60 MHz
Junction Temperature (Tj) +200 ??C
Package Type TO-18 Metal Can ??

JANS2N3637UB/TR Advantages vs Typical Alternatives

This transistor offers superior thermal management and mechanical durability compared to typical plastic-encapsulated alternatives, thanks to its TO-18 metal can package. Its certified JAN military-grade status ensures enhanced reliability and performance consistency in critical systems. The device balances moderate gain with high voltage tolerance, making it more versatile for precision analog and switching applications where accuracy and stability are essential.

Typical Applications

  • Precision amplifier circuits in aerospace and defense systems requiring stable gain and high voltage capability under rigorous conditions.
  • Medium-power switching applications where reliable operation at elevated temperatures is necessary.
  • Signal processing modules in industrial control equipment demanding consistent linear performance.
  • High-frequency electronic assemblies where low noise and stable transistor parameters are critical.

JANS2N3637UB/TR Brand Info

The JANS2N3637UB/TR is part of a series of transistors manufactured under strict military standards by established semiconductor suppliers. The ??JAN?? prefix indicates Joint Army-Navy qualification, assuring users of its high-reliability and ruggedness for defense and aerospace applications. This product is designed and tested to meet rigorous environmental and electrical requirements, reinforcing its position as a dependable component in mission-critical systems worldwide.

FAQ

What does the JAN qualification mean for this transistor?

JAN qualification signifies that the transistor meets stringent military standards for quality, reliability, and performance. Components with this designation are tested to withstand harsh environmental conditions, ensuring suitability for defense and aerospace applications where failure is not an option.

What package type does this transistor use, and why is it important?

This device uses a TO-18 metal can package, which offers superior thermal conductivity and mechanical protection compared to plastic packages. This packaging allows for better heat dissipation and durability in environments with temperature extremes or mechanical stress.

What is the maximum collector current rating? Can it handle high-power applications?

The maximum collector current rating is 0.8A, making it suitable for medium-power applications. While it is not designed for very high-power circuits, it is effective for many analog amplification and switching roles within its specified limits.

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产品中间询盘

How does the device??s gain (hFE) range affect circuit design?

The transistor??s current gain ranges from 40 to 300, offering flexibility in circuit design by accommodating moderate amplification needs. Designers can use this range to ensure stable linear operation and adequate signal amplification in various applications.

Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency (fT) of 60 MHz, this transistor can operate effectively in moderately high-frequency circuits. This makes it appropriate for signal processing and communication equipment requiring stable performance at these frequencies.

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