JANS2N3637-Transistor NPN High-Power Amplifier TO-18 Metal Can Package

  • This transistor amplifies electrical signals, enabling improved control in analog and switching circuits.
  • Its specified voltage rating ensures reliable performance under defined electrical stress conditions.
  • The compact package design supports efficient board layout and space-saving in circuit assemblies.
  • Ideal for signal amplification in communication devices, enhancing clarity and response times.
  • Manufactured to meet stringent reliability standards, ensuring consistent operation over time.
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JANS2N3637-Transistor Overview

The JANS2N3637 transistor is a high-performance silicon NPN bipolar junction transistor designed for switching and amplification applications. Known for its robust construction and reliable operation under military standards, it offers stable electrical characteristics with a collector-emitter voltage rating suitable for medium power circuits. This transistor is ideal for engineers and sourcing specialists looking for a dependable component with proven thermal stability and consistent gain performance. Manufactured to meet stringent quality requirements, the device is widely used in industrial, aerospace, and defense electronics. For more detailed product sourcing and datasheet information, visit IC Manufacturer.

JANS2N3637-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector Current (IC) 1 A (Continuous)
Power Dissipation (Ptot) 1 W
Current Gain (hFE) 30 to 70 (at IC = 150 mA)
Transition Frequency (fT) 100 MHz
Junction Temperature (TJ) Up to 200??C
Package Type TO-18 Metal Can

JANS2N3637-Transistor Key Features

  • High voltage handling capability: Supports up to 60 V collector-emitter voltage, enabling use in moderate voltage switching circuits.
  • Robust current capacity: Can conduct up to 1 A continuously, suitable for moderate power amplification tasks.
  • Military-grade reliability: Manufactured to JAN standards ensuring high-temperature tolerance and long-term stability in harsh environments.
  • Fast switching speed: Transition frequency of 100 MHz supports high-frequency applications with minimal signal distortion.

Typical Applications

  • Switching circuits in industrial control systems where reliable transistor operation ensures stable device performance over extended periods.
  • Amplifier stages in communication equipment requiring moderate gain and frequency response.
  • Signal processing modules in aerospace systems that demand rugged components with high thermal tolerance.
  • General-purpose transistor replacement in legacy military and defense electronics designs following JAN certification.

JANS2N3637-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced reliability and thermal endurance compared to standard commercial equivalents, making it ideal for critical applications. Its military-grade qualification ensures superior sensitivity to temperature variations and consistent gain performance. The metal can packaging provides better heat dissipation and mechanical robustness, which improves integration and longevity in demanding industrial and defense environments.

JANS2N3637-Transistor Brand Info

The JANS2N3637 transistor is a military-standard device historically produced under the Joint Army-Navy (JAN) specification, ensuring stringent quality and performance benchmarks. It is commonly supplied by manufacturers specializing in defense-grade semiconductor components. This product maintains compatibility with legacy systems requiring JAN-certified transistors, providing dependable performance in aerospace, defense, and industrial sectors. Its TO-18 metal can package further underscores its rugged design ethos.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current for this transistor is rated at 1 ampere, which allows it to handle moderate power levels suitable for switching and amplification in various industrial and defense applications.

Can this transistor operate at high temperatures?

Yes, the device is designed to operate with a junction temperature up to 200??C, making it well-suited for environments with elevated thermal conditions common in aerospace and military applications.

What type of package does the transistor come in?

This transistor is housed in

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